Do not always blame the photons: Relationships between deprotection blur, line-edge roughness, and shot noise in extreme ultraviolet photoresists

2009 ◽  
Vol 27 (2) ◽  
pp. 665 ◽  
Author(s):  
Christopher N. Anderson ◽  
Patrick P. Naulleau
Keyword(s):  
Shot Noise ◽  
Extreme Ultraviolet ◽  
Line Edge Roughness ◽  
Edge Roughness

scholarly journals Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1493
Author(s):  
Sang-Kon Kim
Keyword(s):  
Field Effect ◽  
Extreme Ultraviolet ◽  
Field Effect Transistors ◽  
Computational Study ◽  
Drain Current ◽  
Extreme Ultraviolet Lithography ◽  
Line Edge Roughness ◽  
Stochastic Fluctuation ◽  
Ultraviolet Lithography ◽  
Edge Roughness

Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

scholarly journals Low-line edge roughness extreme ultraviolet photoresists of organotin carboxylates

2015 ◽  
Vol 14 (4) ◽  
pp. 043506 ◽  
Author(s):  
Ryan Del Re ◽  
James Passarelli ◽  
Miriam Sortland ◽  
Brian Cardineau ◽  
Yasin Ekinci ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Line Edge Roughness ◽  
Edge Roughness

scholarly journals Characteristic diffuse scattering from distinct line roughnesses

2017 ◽  
Vol 50 (6) ◽  
pp. 1766-1772 ◽  
Author(s):  
Analía Fernández Herrero ◽  
Mika Pflüger ◽  
Jürgen Probst ◽  
Frank Scholze ◽  
Victor Soltwisch
Keyword(s):  
Extreme Ultraviolet ◽  
Structural Elements ◽  
Line Edge Roughness ◽  
Optical Elements ◽  
Angle Scattering ◽  
Edge Roughness ◽  
Angular Scattering ◽  
The Impact

Lamellar gratings are widely used diffractive optical elements; gratings etched into Si can be used as structural elements or prototypes of structural elements in integrated electronic circuits. For the control of the lithographic manufacturing process, a rapid in-line characterization of nanostructures is indispensable. Numerous studies on the determination of regular geometry parameters of lamellar gratings from optical and extreme ultraviolet (EUV) scattering highlight the impact of roughness on the optical performance as well as on the reconstruction of these structures. Thus, a set of nine lamellar Si gratings with a well defined line edge roughness or line width roughness were designed. The investigation of these structures using EUV small-angle scattering reveals a strong correlation between the type of line roughness and the angular scattering distribution. These distinct scattering patterns open new paths for the unequivocal characterization of such structures by EUV scatterometry.

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