Impact of a γ-Al[sub 2]O[sub 3](001) barrier on LaAlO[sub 3] metal-oxide-semiconductor capacitor electrical properties

L. Becerra; C. Merckling; M. El-Kazzi; N. Baboux; B. Vilquin; G. Saint-Girons; C. Plossu; G. Hollinger

doi:10.1116/1.3065437

Impact of a γ-Al[sub 2]O[sub 3](001) barrier on LaAlO[sub 3] metal-oxide-semiconductor capacitor electrical properties

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3065437 ◽

2009 ◽

Vol 27 (1) ◽

pp. 384 ◽

Cited By ~ 5

Author(s):

L. Becerra ◽

C. Merckling ◽

M. El-Kazzi ◽

N. Baboux ◽

B. Vilquin ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Cited By ~ 4

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Cited By ~ 4

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

Applied Physics Letters ◽

10.1063/1.2798248 ◽

2007 ◽

Vol 91 (15) ◽

pp. 152905 ◽

Cited By ~ 7

Author(s):

J. P. Xu ◽

F. Ji ◽

C. X. Li ◽

P. T. Lai ◽

J. G. Guan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2297995 ◽

2014 ◽

Vol 61 (3) ◽

pp. 742-746 ◽

Cited By ~ 25

Author(s):

Li-Sheng Wang ◽

Lu Liu ◽

Jing-Ping Xu ◽

Shu-Yan Zhu ◽

Yuan Huang ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer

Applied Physics Letters ◽

10.1063/1.2954012 ◽

2008 ◽

Vol 92 (26) ◽

pp. 262902 ◽

Cited By ~ 9

Author(s):

X. F. Zhang ◽

J. P. Xu ◽

C. X. Li ◽

P. T. Lai ◽

C. L. Chan ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor

Applied Physics Letters ◽

10.1063/1.3515923 ◽

2010 ◽

Vol 97 (19) ◽

pp. 192902 ◽

Cited By ~ 30

Author(s):

G. He ◽

Z. Q. Sun ◽

M. Liu ◽

L. D. Zhang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Band Alignment ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Capacitor with ZrAlON as the Interfacial Passivation Layer

Chinese Physics Letters ◽

10.1088/0256-307x/34/4/047303 ◽

2017 ◽

Vol 34 (4) ◽

pp. 047303 ◽

Cited By ~ 1

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2356597 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3608-3612 ◽

Cited By ~ 9

Author(s):

Feng Ji ◽

Jing-Ping Xu ◽

Yong Huang ◽

Lu Liu ◽

P. T. Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Interfacial and electrical properties of InGaAs metal-oxide-semiconductor capacitor with TiON/TaON multilayer composite gate dielectric

Applied Physics Letters ◽

10.1063/1.4916539 ◽

2015 ◽

Vol 106 (12) ◽

pp. 123504 ◽

Cited By ~ 4

Author(s):

L. S. Wang ◽

J. P. Xu ◽

L. Liu ◽

H. H. Lu ◽

P. T. Lai ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Multilayer Composite ◽

Metal Oxide Semiconductor Capacitor

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Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

Journal of Materials Chemistry C ◽

10.1039/d0tc04725b ◽

2021 ◽

Author(s):

Dong Gun Kim ◽

Cheol Hyun An ◽

Sanghyeon Kim ◽

Dae Seon Kwon ◽

Junil Lim ◽

...

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Tio2 Film ◽

Single Layer ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Gate Insulator ◽

Oxide Semiconductor ◽

High K ◽

Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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