scholarly journals Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

2007 ◽  
Vol 91 (15) ◽  
pp. 152905 ◽  
Author(s):  
J. P. Xu ◽  
F. Ji ◽  
C. X. Li ◽  
P. T. Lai ◽  
J. G. Guan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Metal Oxide Semiconductor Capacitor

High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric

2007 ◽  
Vol 91 (9) ◽  
pp. 093509 ◽  
Author(s):  
N. Goel ◽  
P. Majhi ◽  
W. Tsai ◽  
M. Warusawithana ◽  
D. G. Schlom ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Indium Content ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Indium Content ◽  
Metal Oxide Semiconductor Capacitor
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