Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks

B. Kaczer; A. Veloso; Ph. J. Roussel; T. Grasser; G. Groeseneken

doi:10.1116/1.3054352

Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacks

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3054352 ◽

2009 ◽

Vol 27 (1) ◽

pp. 459 ◽

Cited By ~ 7

Author(s):

B. Kaczer ◽

A. Veloso ◽

Ph. J. Roussel ◽

T. Grasser ◽

G. Groeseneken

Keyword(s):

Work Function ◽

Gate Stacks ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of pMOSFET with High-k/Metal Gate Stacks

ECS Transactions ◽

10.1149/05201.0953ecst ◽

2013 ◽

Vol 52 (1) ◽

pp. 953-957 ◽

Cited By ~ 1

Author(s):

S. Ren ◽

H. Yang ◽

W. Wang ◽

H. Xu ◽

W. Luo ◽

...

Keyword(s):

Negative Bias ◽

Degradation Mechanisms ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Analysis of Positive Bias Temperature Instability Characteristic for Nano-scale NMOSFETs with La-incorporated High-k/metal Gate Stacks

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2011.24.3.182 ◽

2011 ◽

Vol 24 (3) ◽

pp. 182-187

Author(s):

Hyuk-Min Kwon ◽

In-Shik Han ◽

Sang-Uk Park ◽

Jung-Deuk Bok ◽

Yi-Jung Jung ◽

...

Keyword(s):

Positive Bias ◽

Gate Stacks ◽

Metal Gate ◽

Temperature Instability ◽

Nano Scale ◽

Bias Temperature Instability ◽

High K ◽

Instability Characteristic

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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Positive Bias Temperature Instability Effects in advanced High-k / Metal Gate NMOSFETs

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796085 ◽

2008 ◽

Cited By ~ 2

Author(s):

D.P. Ioannou ◽

S. Mittl ◽

G. LaRosa

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies

2011 11th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2011.6144557 ◽

2011 ◽

Cited By ~ 2

Author(s):

Mrunal A. Khaderbad ◽

Rohit Pandharipande ◽

Aradhana Gautam ◽

Abhishek Mishra ◽

Meenakshi Bhaisare ◽

...

Keyword(s):

Work Function ◽

Gate Stacks ◽

Metal Gate ◽

Bottom Up ◽

High K ◽

Work Function Tuning

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Anomalous Gate Current Hump after Dynamic Negative Bias Stress and Negative-Bias Temperature-Instability in p-MOSFETs with HfxZr1−xO2and HfO2/Metal Gate Stacks

ECS Journal of Solid State Science and Technology ◽

10.1149/2.027309jss ◽

2013 ◽

Vol 2 (9) ◽

pp. Q187-Q191

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Gate Current ◽

Bias Stress ◽

Bias Temperature Instability

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New insight on negative bias temperature instability degradation with drain bias of 28nm High-K Metal Gate p-MOSFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2014.05.010 ◽

2014 ◽

Vol 54 (11) ◽

pp. 2378-2382 ◽

Cited By ~ 6

Author(s):

Miao Liao ◽

Zhenghao Gan

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Drain Bias

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Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2013.07.026 ◽

2013 ◽

Vol 53 (9-11) ◽

pp. 1351-1354

Author(s):

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Hyeokjin Kim ◽

Gang-Jun Kim ◽

Ji-Hoon Seo ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Stress Voltage

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Voltage Ramp Stress for Bias Temperature Instability Testing of Metal-Gate/High- $k$ Stacks

IEEE Electron Device Letters ◽

10.1109/led.2009.2032790 ◽

2009 ◽

Vol 30 (12) ◽

pp. 1347-1349 ◽

Cited By ~ 60

Author(s):

A. Kerber ◽

S.A. Krishnan ◽

E.A. Cartier

Keyword(s):

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K ◽

Voltage Ramp

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Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high- k /metal gate nMOSFETs with gate-last process

Chinese Physics B ◽

10.1088/1674-1056/24/12/127305 ◽

2015 ◽

Vol 24 (12) ◽

pp. 127305

Author(s):

Lu-Wei Qi ◽

Hong Yang ◽

Shang-Qing Ren ◽

Ye-Feng Xu ◽

Wei-Chun Luo ◽

...

Keyword(s):

Positive Bias ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability ◽

High K

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