Correlation of the growth rate for selective epitaxial growth of silicon and oxide thickness and oxide coverage in a reduced pressure chemical vapor deposition pancake reactor

2008 ◽  
Vol 26 (5) ◽  
pp. 1712
Author(s):  
Kung-Yen Lee
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thickness ◽  
Reduced Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition

2005 ◽  
Vol 245-246 ◽  
pp. 39-50
Author(s):  
H.H. Radamson ◽  
J. Hållstedt
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Reduced Pressure ◽  
Boron Doped ◽  
Pressure Chemical ◽  
Silicon Based

In this paper, the following issues: epitaxial growth, boron incorporation and electrical properties of Si1-x-yGexCy layers grown by reduced pressure chemical vapor deposition (RPCVD) are presented. Furthermore, diffusion of carbon and boron in silicon-based material is also discussed.

Low temperature selective Si epitaxy by reduced pressure chemical vapor deposition introducing periodic deposition and etching cycles with SiH4, H2 and HCl

2000 ◽  
Vol 609 ◽  
Author(s):  
Hong-Seung Kim ◽  
Kyu-Hwan Shim ◽  
Jeong-Yong Lee ◽  
Jin-Yeong Kang
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Etching Process ◽  
Reduced Pressure ◽  
Gas System ◽  
Pressure Chemical ◽  
Si Epitaxy

ABSTRACTThis paper presents the experimental results of selective Si epitaxial growth from 650 °C to 700 °C on (100) silicon wafers with oxide patterns using reduced pressure chemical vapor deposition with the SiH4-HCl-H2 gas system. In addition, an HCl etching process is introduced and the conditions of the deposition and etching processes are addressed to sustain the selectivity. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO2. In these experiments it has been also observed that the Si layer was grown to 3 nm while sustaining the selectivity. Moreover, further introduction of the HCl etching process following the deposition allowed a 50 nm-thick film to sustain the selectivity for twenty periods.

Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems

1996 ◽  
Vol 448 ◽  
Author(s):  
I -M. Leet ◽  
W. -C. Wang ◽  
M. T. K. Koh ◽  
J.P. Denton ◽  
E. P. Kvam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Defect Density ◽  
Low Cost ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical

AbstractSelective epitaxial growth (SEG) of silicon-germanium (SiGe) films on patterned-oxide silicon substrates, using a tubular hot-wall low pressure chemical vapor deposition (LPCVD) system, is demonstrated in this study. This conventional system is proposed as a low cost alternative for SiGe epitaxial growth. Three process improvements needed to achieve quality growth are discussed. First, the hydrogen bake process is modified to eliminate Ge-outgassing. Secondly, a Si SEG buffer layer is deposited prior to SiGe SEG. Finally, a small flow of dichlorosilane is introduced during the temperature ramp-down period prior to SiGe SEG. The growth results are discussed in terms of growth selectivity, thickness uniformity, growth rate, defect density, SiGe film composition, and electrical properties.

Sign in / Sign up

Export Citation Format

Share Document