Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer

Masamichi Akazawa; Hideki Hasegawa

doi:10.1116/1.2952456

Admittance study of GaAs high-k metal-insulator-semiconductor capacitors with Si interface control layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2952456 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1569 ◽

Cited By ~ 14

Author(s):

Masamichi Akazawa ◽

Hideki Hasegawa

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

Control Layer

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GaAs high-k dielectric metal-insulator-semiconductor structure having silicon interface control layer

physica status solidi (c) ◽

10.1002/pssc.200779208 ◽

2008 ◽

Vol 5 (9) ◽

pp. 2729-2732 ◽

Cited By ~ 1

Author(s):

M. Akazawa ◽

H. Hasegawa

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

High K ◽

High K Dielectric ◽

Silicon Interface ◽

Control Layer

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Optimization of Si interface control layer thickness for high-k GaAs metal–insulator–semiconductor structures

Materials Science and Engineering B ◽

10.1016/j.mseb.2009.03.009 ◽

2009 ◽

Vol 165 (1-2) ◽

pp. 122-125 ◽

Cited By ~ 1

Author(s):

Masamichi Akazawa ◽

Hideki Hasegawa

Keyword(s):

Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Interface Control ◽

High K ◽

Control Layer

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Application of Silicon Interface Control Layer Technique to Fabrication of InGaAs Metal-Insulator-Semiconductor FETs

Control of Semiconductor Interfaces ◽

10.1016/b978-0-444-81889-8.50050-x ◽

1994 ◽

pp. 271-276 ◽

Cited By ~ 1

Author(s):

S. Suzuki ◽

Y.G. Xie ◽

T. Sawada ◽

H. Hasegawa

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

Layer Technique ◽

Silicon Interface ◽

Control Layer

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Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer

Applied Surface Science ◽

10.1016/s0169-4332(97)00577-1 ◽

1998 ◽

Vol 123-124 ◽

pp. 615-618 ◽

Cited By ~ 11

Author(s):

Hiroshi Takahashi ◽

Tamotsu Hashizume ◽

Hideki Hasegawa

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Interface Control ◽

Silicon Interface ◽

Control Layer

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A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters ◽

10.1088/0256-307x/29/5/057702 ◽

2012 ◽

Vol 29 (5) ◽

pp. 057702 ◽

Cited By ~ 1

Author(s):

Yue-Chan Kong ◽

Fang-Shi Xue ◽

Jian-Jun Zhou ◽

Liang Li ◽

Chen Chen ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

High K ◽

High K Dielectric

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Capacitance-voltage and photoluminescence study of high-k∕GaAs interfaces controlled by Si interface control layer

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3167361 ◽

2009 ◽

Vol 27 (4) ◽

pp. 2028 ◽

Cited By ~ 6

Author(s):

Masamichi Akazawa ◽

Alina Domanowska ◽

Boguslawa Adamowicz ◽

Hideki Hasegawa

Keyword(s):

Photoluminescence Study ◽

Interface Control ◽

High K ◽

Capacitance Voltage ◽

Control Layer

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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 International Conference on IC Design and Technology (ICICDT) ◽

10.1109/icicdt.2019.8790844 ◽

2019 ◽

Cited By ~ 1

Author(s):

Yutao Cai ◽

Yang Wang ◽

Miao Cui ◽

Wen Liu ◽

Huiqing Wen ◽

...

Keyword(s):

Electrical Properties ◽

Semiconductor Devices ◽

Passivation Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422495 ◽

2007 ◽

Author(s):

K. H. Chiang ◽

H. C. Wu ◽

P. S. Chen ◽

C. H. Kuan ◽

C. S. Tsai

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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Peculiarities of electrical properties of metal-insulator-semiconductor capacitors based on high-k dielectric stack containing HfTiSiO:N and HfTiO:N films

2009 10th International Conference on Ultimate Integration of Silicon ◽

10.1109/ulis.2009.4897569 ◽

2009 ◽

Author(s):

V. Mikhelashvili ◽

P. Thangadurai ◽

W. D. Kaplan ◽

G. Eisenstein

Keyword(s):

Electrical Properties ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

High K Dielectric

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Electrical characteristics of metal–insulator–semiconductor and metal–insulator–semiconductor–insulator–metal capacitors under different high-k gate dielectrics investigated in the semi-classical and quantum mechanical models

Bulletin of Materials Science ◽

10.1007/s12034-016-1341-5 ◽

2017 ◽

Vol 40 (1) ◽

pp. 67-78 ◽

Cited By ~ 3

Author(s):

SLAH HLALI ◽

NEILA HIZEM ◽

ADEL KALBOUSSI

Keyword(s):

Gate Dielectrics ◽

Quantum Mechanical ◽

Electrical Characteristics ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Mechanical Models

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