Cluster primary ions: Spikes, sputtering yields, secondary ion yields, and interrelationships for secondary molecular ions for static secondary ion mass spectrometry

2008 ◽  
Vol 26 (4) ◽  
pp. 660-667 ◽  
Author(s):  
Martin P. Seah
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Ions ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Primary Ions ◽  
Sputtering Yields ◽  
Secondary Ion

Molecular surface analysis by TOF-SIMS

1992 ◽  
Vol 50 (2) ◽  
pp. 1556-1557
Author(s):  
Robert W. Odom
Keyword(s):  
Mass Spectrometry ◽  
Surface Analysis ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Ions ◽  
Molecular Surface ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Static Conditions ◽  
Primary Ions ◽  
Secondary Ion

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) performs surface sensitive analysis of the elemental and molecular composition of solids. TOFSIMS is a relatively new embodiment of static secondary ion mass spectrometry (SSIMS) in which the dose of primary ions incident on the surface is typically less than 1012 ions/cm2. Since typical solid surfaces have an atomic density of 1015 atoms/cm2, this primary ion dose nominally removes less than 0.1% of a monolayer. Hence, SIMS analyses performed under these static conditions represent near surface analysis in which secondary ions are produced from the top few monolayers of the surface. The actual sampling depth is determined by the primary ion momentum, angle of incidence and chemistry of the surface. Since low dose primary ions cause minimal perturbation of the chemistry of the solid surface, SSIMS analyses often produce molecular or pseudo-molecular ions characteristic of the chemical composition of the surface. Thus, molecular ions or structurally significant fragment ions are often observed in SSIMS analyses of surfaces containing inorganic and organic residues, polymers surfaces, coatings, and biological materials such as tissues and membranes.

Ion yield improvement for static secondary ion mass spectrometry by use of polyatomic primary ions

2008 ◽  
Vol 22 (10) ◽  
pp. 1481-1496 ◽  
Author(s):  
Roel De Mondt ◽  
Luc Van Vaeck ◽  
Andreas Heile ◽  
Heinrich F. Arlinghaus ◽  
Nicolas Nieuwjaer ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Yield Improvement ◽  
Ion Mass Spectrometry ◽  
Primary Ions ◽  
Secondary Ion

scholarly journals Enhancing Secondary Ion Yields in Time of Flight-Secondary Ion Mass Spectrometry Using Water Cluster Primary Beams

2013 ◽  
Vol 85 (12) ◽  
pp. 5654-5658 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Andrew Barber ◽  
John S. Fletcher ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

scholarly journals Enhancing Ion Yields in Time-of-Flight-Secondary Ion Mass Spectrometry: A Comparative Study of Argon and Water Cluster Primary Beams

2015 ◽  
Vol 87 (4) ◽  
pp. 2367-2374 ◽  
Author(s):  
Sadia Sheraz née Rabbani ◽  
Irma Berrueta Razo ◽  
Taylor Kohn ◽  
Nicholas P. Lockyer ◽  
John C. Vickerman
Keyword(s):  
Mass Spectrometry ◽  
Comparative Study ◽  
Water Cluster ◽  
Secondary Ion Mass Spectrometry ◽  
Time Of Flight ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion

High-Precision Characterization of III-Nitride Semiconductor Alloys with Secondary Ion Mass Spectrometry (SIMS)

1995 ◽  
Vol 395 ◽  
Author(s):  
J W. Erickson ◽  
Y. Gao ◽  
R. G. Wilson
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Great Sensitivity ◽  
Common Interest ◽  
Matrix Composition ◽  
Calibration Curves ◽  
Ion Mass Spectrometry ◽  
Ion Yields ◽  
Secondary Ion ◽  
Better Than

ABSTRACTSamples of representative AlxGayIn1−x-yN compositions have been studied with secondary ion mass spectrometry (SIMS). First, ionized species of common interest (H, B, C, O, Mg, Si, and Cd) were implanted into the Ill-nitride samples to provide calibrated standards. Depth profiles and conversion factors for quantification of dopants were then obtained using O2+ or Cs+bombardment and positive or negative SIMS to measure B+ and Mg+; H−, B−, C−, O−, and Si−; and CdCs+. In addition calibration curves for quantification of stoichiometry were prepared using MCs+ ions (NCs+, AlCs−, GaCs+, InCs+) for which the ion yields are relatively independent of the matrix composition; and using atomic, dimer, and trimer ions (Al, Ga, In, Al2, Ga2, In2, Al3, Ga3) which are very sensitive to matrix composition. The empirical calibration curves show small non-linearities. Dopant concentrations can be quantified with great sensitivity (detection limits usually below 1 ppm), accuracy (usually better than 10%), and precision (better than 25%). Matrix stoichiometry can be quantified with an accuracy of about 1–3%.

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