Improved epitaxy of barium titanate by molecular beam epitaxy through a single crystalline magnesium oxide template for integration on hexagonal silicon carbide

2008 ◽  
Vol 26 (3) ◽  
pp. 1110 ◽  
Author(s):  
T. L. Goodrich ◽  
Z. Cai ◽  
M. D. Losego ◽  
J.-P. Maria ◽  
L. Fitting Kourkoutis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Barium Titanate ◽  
Magnesium Oxide ◽  
Molecular Beam ◽  
Single Crystalline

Single-crystalline BaTiO3films grown by gas-source molecular beam epitaxy

2014 ◽  
Vol 7 (12) ◽  
pp. 125502 ◽  
Author(s):  
Yuya Matsubara ◽  
Kei S. Takahashi ◽  
Yoshinori Tokura ◽  
Masashi Kawasaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source

Properties of Epitaxial SrTiO3 Thin Films Grown on Silicon by Molecular Beam Epitaxy

1999 ◽  
Vol 567 ◽  
Author(s):  
Z. Yu ◽  
R. Droopad ◽  
J. Ramdani ◽  
J.A. Curless ◽  
C.D. Overgaard ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
State Density ◽  
Unit Cell ◽  
Ex Situ ◽  
Silicon Oxide Layer ◽  
Single Crystalline ◽  
X Ray

ABSTRACTSingle crystalline perovskite oxides such as SrTiO3 (STO) are highly desirable for future generation ULSI applications. Over the past three decades, development of crystalline oxides on silicon has been a great technological challenge as an amorphous silicon oxide layer forms readily on the Si surface when exposed to oxygen preventing the intended oxide heteroepitaxy on Si substrate. Recently, we have successfully grown epitaxial STO thin films on Si(001) surface by using molecular beam epitaxy (MBE) method. Properties of the STO films on Si have been characterized using a variety of techniques including in-situ reflection high energy electron diffraction (RHEED), ex-situ X-ray diffraction (XRD), spectroscopic ellipsometry (SE), Auger electron spectroscopy (AES) and atomic force microscopy (AFM). The STO films grown on Si(001) substrate show bright and streaky RHEED patterns indicating coherent two-dimensional epitaxial oxide film growth with its unit cell rotated 450 with respect to the underlying Si unit cell. RHEED and XRD data confirm the single crystalline nature and (001) orientation of the STO films. An X-ray pole figure indicates the in-plane orientation relationship as STO[100]//Si[110] and STO(001)// Si(001). The STO surface is atomically smooth with AFM rms roughness of 1.2 AÅ. The leakage current density is measured to be in the low 10−9 A/cm2 range at 1 V, after a brief post-growth anneal in O2. An interface state density Dit = 4.6 × 1011 eV−1 cm−2 is inferred from the high-frequency and quasi-static C-V characteristics. The effective oxide thickness for a 200 Å STO film is around 30 Å and is not sensitive to post-growth anneal in O2 at 500-700°C. These STO films are also robust against forming gas anneal. Finally, STO MOSFET structures have been fabricated and tested. An extrinsic carrier mobility value of 66 cm2 V−11 s−1 is obtained for an STO PMOS device with a 2 μm effective gate length.

Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

2005 ◽  
Vol 44 (No. 34) ◽  
pp. L1076-L1079 ◽  
Author(s):  
Ching-Lien Hsiao ◽  
Li-Wei Tu ◽  
Min Chen ◽  
Zhi-Wei Jiang ◽  
Ni-Wan Fan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

Thick single crystalline vanadyl phthalocyanine film epitaxially grown on KBr crystal by molecular beam epitaxy

1996 ◽  
Vol 160 (3-4) ◽  
pp. 279-282 ◽  
Author(s):  
Kenko Yamada ◽  
Hajime Hoshi ◽  
Ken Ishikawa ◽  
Hideo Takezoe ◽  
Atsuo Fukuda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Crystalline
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