Fabrication and characterization of InGaAsP∕InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching

Author(s):  
R. Zhang ◽  
Z. Ren ◽  
S. Yu
2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.


2008 ◽  
Vol 54 ◽  
pp. 378-383
Author(s):  
Ali Badar Alamin Dow ◽  
Katerina Ivanova ◽  
T. Ivanov ◽  
Ivo W. Rangelow

Micro tweezers are one of the microsystems technology applications and typically used for handling micro parts and manipulated small objects. Microactuators such as thermal microactuator are mainly used to drive the micro tweezers. This paper present the design, simulation, fabrication and characterization of a new developed two hot arms thermal micro actuator with integrated micro tweezers. The advantages of this new micro actuator with integrated tweezers are, the actuator flexure is not more part of the actuation loop and the electric current only passes through the inner and outer thin hot arms of the actuators which have a high electrical resistance. The actuator efficiency will increases dramatically since all applied power will contribute to the tweezers movement. Further more, a heat dissipation element which act as a heat radiator was introduced to decrease the heat transfer to the tweezers which is strongly required in some applications. The device was fabricated out of silicon substrate by inductively coupled plasma etching process. The device showed very good controlling ability during its operation and a good agreement between experimental and simulation results was achieved.


2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  

2013 ◽  
Vol 22 (10) ◽  
pp. 106802
Author(s):  
Bo Wang ◽  
Shi-Chen Su ◽  
Miao He ◽  
Hong Chen ◽  
Wen-Bo Wu ◽  
...  

2005 ◽  
Vol 34 (6) ◽  
pp. 740-745 ◽  
Author(s):  
E. Laffosse ◽  
J. Baylet ◽  
J. P. Chamonal ◽  
G. Destefanis ◽  
G. Cartry ◽  
...  

2009 ◽  
Vol 517 (14) ◽  
pp. 3859-3861 ◽  
Author(s):  
Byung-Jae Kim ◽  
Hyunjung Jung ◽  
Hong-Yeol Kim ◽  
Joona Bang ◽  
Jihyun Kim

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