Level set modeling of the orientation dependence of solid phase epitaxial regrowth

2008 ◽  
Vol 26 (1) ◽  
pp. 357 ◽  
Author(s):  
Saurabh Morarka ◽  
N. G. Rudawski ◽  
Mark E. Law
Keyword(s):  
Level Set ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Epitaxial Regrowth

Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

2009 ◽  
Vol 105 (5) ◽  
pp. 053701 ◽  
Author(s):  
S. Morarka ◽  
N. G. Rudawski ◽  
M. E. Law ◽  
K. S. Jones ◽  
R. G. Elliman
Keyword(s):  
Level Set ◽  
Solid Phase ◽  
Level Set Methods ◽  
Two Dimensional ◽  
Epitaxial Regrowth

Molecular Dynamics Modeling of Stress and Orientation Dependence of Solid Phase Epitaxial Regrowth

2010 ◽  
Vol 1245 ◽  
Author(s):  
Haoyu Lai ◽  
Stephen M Sea ◽  
Harold Kennel ◽  
Scott T Dunham
Keyword(s):  
Molecular Dynamics ◽  
Semiconductor Device ◽  
Interatomic Potential ◽  
Solid Phase ◽  
Uniaxial Stress ◽  
Md Simulations ◽  
Orientation Dependence ◽  
Device Fabrication ◽  
Dynamics Modeling ◽  
Epitaxial Regrowth

AbstractSolid Phase Epitaxial Regrowth (SPER) is of great technological importance in semiconductor device fabrication. A better understanding and accurately modeling of its behavior are vital to the design of fabrication processes and the improvement of the device performance. In this paper, SPER was modeled by Molecular Dynamics (MD) with Tersoff potential. Extensive MD simulations were conducted to study the dependence of SPER rate on growth orientation and uniaxial stress. The results were compared with experimental data. It was concluded that MD with Tersoff potential can qualitively describe the SPER process. For a more quantitatively accurate model, a better interatomic potential are needed.

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

2012 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Sheng-Wen Chen ◽  
Chang-Peng Wu ◽  
Chung-Wei Cheng ◽  
Chih-Wei Chien ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Laser Anneal

scholarly journals Atomistic modeling of the Ge composition dependence of solid phase epitaxial regrowth in SiGe alloys

2017 ◽  
Vol 122 (10) ◽  
pp. 105702
Author(s):  
M. Prieto-Depedro ◽  
A. Payet ◽  
B. Sklénard ◽  
I. Martin-Bragado
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Atomistic Modeling ◽  
Epitaxial Regrowth

Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth

2004 ◽  
Vol 22 (1) ◽  
pp. 306 ◽  
Author(s):  
R. Lindsay ◽  
K. Henson ◽  
W. Vandervorst ◽  
K. Maex ◽  
B. J. Pawlak ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Time-Resolved Reflectivity Study of Solid-Phase Epitaxial Regrowth in Relaxed and Strained Si1−xGex Epilayers

1992 ◽  
Vol 281 ◽  
Author(s):  
T. E. Haynes ◽  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Composition Dependence ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Alloy Layer ◽  
Atomic Fraction ◽  
Bulk Alloy ◽  
Strained Layers ◽  
Time Resolved ◽  
Epitaxial Regrowth ◽  
Different Types

ABSTRACTThe rate of solid-phase epitaxial regrowth has been studied using time-resolved reflectivity in three different types of SiGe/Si epilayers amorphized by ion implantation. In two of these cases, the alloy epilayer contained either 12% or 20% Ge, and the amorphization depth was greater than the thickness (2000 Å) of the SiGe alloy layer. Time-resolved reflectivity measurements showed that the rate of regrowth was not constant in these two cases, but first decreased after passing the SiGe/Si interface, and then increased. The minimum regrowth rate occurred closer to the SiGe/Si interface in the epilayers with the larger Ge atomic fraction. In the third type of sample, the alloy epilayer thickness was ∼7μm, so that the initial epilayer (15% Ge) had the lattice constant of the bulk alloy. Furthermore, amorphization and regrowth occurred entirely within the relaxed alloy layer. In this case, the regrowth rate was constant. The composition dependence of the regrowth-rate transient in the strained layers is discussed in the context of a ‘critical-thickness’ model of strain relaxation.

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