Fabrication of high aspect ratio Si nanogratings with smooth sidewalls for a deep UV-blocking particle filter

Author(s):  
Pran Mukherjee ◽  
Myung-Gyu Kang ◽  
Thomas H. Zurbuchen ◽  
L. Jay Guo ◽  
Fred A. Herrero
2012 ◽  
Vol 98 ◽  
pp. 433-435 ◽  
Author(s):  
T. Weber ◽  
T. Käsebier ◽  
A. Szeghalmi ◽  
M. Knez ◽  
E.-B. Kley ◽  
...  

1983 ◽  
Vol 29 ◽  
Author(s):  
D. V. Podlesnik ◽  
H. H. Gilgen ◽  
R. M. Osgood

ABSTRACTDeep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical conditions. A correlation between the UV absorption in different etching solutions and the light-enhanced etching rates is examined. Gratings with 100-nm resolution have been produced and high-aspect-ratio via-holes have been etched.


2018 ◽  
Author(s):  
Gen Hayase

By exploiting the dispersibility and rigidity of boehmite nanofibers (BNFs) with a high aspect ratio of 4 nm in diameter and several micrometers in length, multiwall-carbon nanotubes (MWCNTs) were successfully dispersed in aqueous solutions. In these sols, the MWCNTs were dispersed at a ratio of about 5–8% relative to BNFs. Self-standing BNF–nanotube films were also obtained by filtering these dispersions and showing their functionality. These films can be expected to be applied to sensing materials.


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