Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy

Author(s):  
L. Bolotov ◽  
M. Nishizawa ◽  
T. Kanayama ◽  
Y. Miura
2016 ◽  
Vol 42 (11) ◽  
pp. 1090-1093 ◽  
Author(s):  
M. I. Vexler ◽  
G. G. Kareva ◽  
Yu. Yu. Illarionov ◽  
I. V. Grekhov

1996 ◽  
Vol 80 (11) ◽  
pp. 6329-6332 ◽  
Author(s):  
U. Lunz ◽  
M. Keim ◽  
G. Reuscher ◽  
F. Fischer ◽  
K. Schüll ◽  
...  

2015 ◽  
Vol 87 (9) ◽  
pp. 4910-4916 ◽  
Author(s):  
Jason P. Campbell ◽  
Jason T. Ryan ◽  
Pragya R. Shrestha ◽  
Zhanglong Liu ◽  
Canute Vaz ◽  
...  

2018 ◽  
Vol 60 (2) ◽  
pp. 255
Author(s):  
А.Е. Почтенный ◽  
А.Н. Лаппо ◽  
И.П. Ильюшонок

AbstractSome results of studying the direct-current (DC) conductivity of perylenetetracarboxylic acid dimethylimide films by cyclic oxygen thermal desorption are presented. The microscopic parameters of hopping electron transport over localized impurity and intrinsic states were determined. The bandgap width and the sign of major current carriers were determined by scanning probe microscopy methods (atomic force microscopy, scanning probe spectroscopy, and photoassisted Kelvin probe force microscopy). The possibility of the application of photoassisted scanning tunneling microscopy for the nanoscale phase analysis of photoconductive films is discussed.


2002 ◽  
Vol 719 ◽  
Author(s):  
M. Barbé ◽  
F. Bailly ◽  
J. Chevallier ◽  
S. Silvestre ◽  
D. Loridant-Bernard ◽  
...  

AbstractIn GaAs, (Si,H) complexes are efficiently dissociated at 300 K by photons with energies above 3.5 eV. Their optical cross-section is 10-19-10-18 cm2. This dissociation is the result of an electronic excitation of the Si-H bond of the complex from a bonding state to an antibonding state. (Si,H) and (S,H) complexes in AlGaAs alloys are also dissociated under UV illumination with optical cross-sections similar to GaAs. In passivated 2D AlGaAs-GaAs heterostructures, the evolution of the extra sheet carrier concentration at low photon densities presents a loss of free carriers attributed to the filling of surface states. In AlGaAs and in 2D AlGaAs-GaAs heterostructures, the replacement of hydrogen by deuterium in the complexes shows that the (Si,D) and (S,D) complexes are significantly more stable than the (Si,H) and (S,H) complexes as previously found in GaAs:Si,H.


1998 ◽  
Vol 41 (9) ◽  
pp. 943-953
Author(s):  
G. F. Karavaev ◽  
S. N. Grinyaev

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