Resonant electron tunneling in (111) GaAs/AlAs structures

1998 ◽  
Vol 41 (9) ◽  
pp. 943-953
Author(s):  
G. F. Karavaev ◽  
S. N. Grinyaev
Keyword(s):  
Electron Tunneling ◽  
Resonant Electron

Resonant electron tunneling and related charging phenomena in metal–oxide–p +-Si nanostructures

2016 ◽  
Vol 42 (11) ◽  
pp. 1090-1093 ◽  
Author(s):  
M. I. Vexler ◽  
G. G. Kareva ◽  
Yu. Yu. Illarionov ◽  
I. V. Grekhov
Keyword(s):  
Metal Oxide ◽  
Electron Tunneling ◽  
Resonant Electron ◽  
Si Nanostructures

Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures

1996 ◽  
Vol 80 (11) ◽  
pp. 6329-6332 ◽  
Author(s):  
U. Lunz ◽  
M. Keim ◽  
G. Reuscher ◽  
F. Fischer ◽  
K. Schüll ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Tunneling ◽  
Single Quantum ◽  
Double Barrier ◽  
Single Quantum Well ◽  
Resonant Electron

scholarly journals Resonant electron tunneling in a tip-controlled potential landscape

2014 ◽  
Vol 89 (24) ◽  
Author(s):  
Nikola Pascher ◽  
Flavia Timpu ◽  
Clemens Rössler ◽  
Thomas Ihn ◽  
Klaus Ensslin ◽  
...  
Keyword(s):  
Electron Tunneling ◽  
Resonant Electron ◽  
Controlled Potential ◽  
Potential Landscape

Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures

2013 ◽  
Vol 740-742 ◽  
pp. 557-560 ◽  
Author(s):  
Lucian Dragos Filip ◽  
Ioana Pintilie ◽  
Bengt Gunnar Svensson
Keyword(s):  
Low Temperature ◽  
Low Temperatures ◽  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Energy Levels ◽  
Neutral Donor ◽  
Capacitance Voltage ◽  
Probe Frequency ◽  
Resonant Electron ◽  
Donor States

In this work, anomalous discontinuities observed in Capacitance-Voltage (C-V) characteristics on non-nitridated n-4H-SiC/SiO2 capacitors at low temperature are addressed. The appearance of abrupt capacitance minima, always at the same gate voltages (4V and 8V) and independent on probe frequency, led us to consider a resonant electron tunneling process from neutral donor states present at the SiC/SiO2 interface into two well defined energy levels in the oxide layer. Results of numerical simulations based on this model describe quantitatively the experimentally observed discontinuities at 4V and 8V and provide strong evidence for the presence resonant tunneling.

Efficient spin injection into self-assembled quantum dots via LO-phonon-assisted resonant electron tunneling

2006 ◽  
Vol 88 (2) ◽  
pp. 023114 ◽  
Author(s):  
A. Murayama ◽  
T. Asahina ◽  
K. Nishibayashi ◽  
I. Souma ◽  
Y. Oka
Keyword(s):  
Quantum Dots ◽  
Electron Tunneling ◽  
Spin Injection ◽  
Resonant Electron ◽  
Self Assembled
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