Challenges in 1 Teradot∕in.[sup 2] dot patterning using electron beam lithography for bit-patterned media

2007 ◽  
Vol 25 (6) ◽  
pp. 2202 ◽  
Author(s):  
XiaoMin Yang ◽  
Shuaigang Xiao ◽  
Wei Wu ◽  
Yuan Xu ◽  
Keith Mountfield ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bit Patterned Media ◽  
Patterned Media

Fabrication and Recording of Bit Patterned Media Prepared by Rotary Stage Electron Beam Lithography

2011 ◽  
Vol 47 (10) ◽  
pp. 2656-2659 ◽  
Author(s):  
Matthew T. Moneck ◽  
Stephen Powell ◽  
James A. Bain ◽  
Jian-Gang Zhu ◽  
Takeru Okada ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Rotary Stage

Measurement of Arrays of Dots Produced by Electron-beam Lithography

2006 ◽  
Vol 961 ◽  
Author(s):  
Philip C. Hoyle ◽  
Ian Laidler
Keyword(s):  
Electron Beam ◽  
Standard Deviation ◽  
Electron Beam Lithography ◽  
Tool Development ◽  
Patterned Media ◽  
Tool Performance ◽  
Scanning Electron

ABSTRACTElectron-beam mastering of templates for patterned media presents a challenge to the toolmaker to simultaneously meet throughput, resolution and placement requirements. Fundamental to tool development is the ability to measure the placement to true grid of shapes as small as 7 nm over the whole substrate. In this article we describe a technique, consisting of acquiring and analyzing scanning electron (SE) micrographs, for measuring the placement errors in lithography similar to that required for patterned media, albeit over a few square microns and without scale and orthogonality components. The method enabled the measurement of placement errors of dots in an array with accuracy down to about 2 nm. The technique was used to benchmark current X-Y tool performance and the smallest 3× standard deviation of placement error was found to be around 4.5 nm. A clearer understanding of the necessary tool improvements was obtained. The use of the technique as basis for measuring errors to true grid over the entire substrate is discussed.

Effect of Salty Development on Forming HSQ Resist Nanodot Arrays with a Pitch of 15×15 nm2 by 30-keV Electron Beam Lithography

2013 ◽  
Vol 534 ◽  
pp. 113-117
Author(s):  
Takuya Komori ◽  
Hui Zhang ◽  
Takashi Akahane ◽  
Zulfakri bin Mohamad ◽  
You Yin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ammonium Hydroxide ◽  
Hydrogen Silsesquioxane ◽  
Ultrahigh Resolution ◽  
Patterned Media ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Nanodot Arrays

We investigated the effect of ultrahigh-resolution salty (NaCl contained) development of hydrogen silsesquioxane (HSQ) resist on forming fine dot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography for patterned media. The optimized concentration of resist developers was determined to fabricate most packed pattern. We found that increasing the concentration of NaCl into tetramethyl ammonium hydroxide (TMAH) could greatly improve the resist contrast (γ-value) of HSQ. And by using 2.3 wt% TMAH/4 wt% NaCl developer, we demonstrated 15×15 nm2 pitched (3 Tbit/in.2) HSQ resist dot arrays with a dot size of < 10 nm.

Continuous-Stage-Movement Blankingless Electron-Beam Lithography for Patterned Media Template Fabrication

2009 ◽  
Vol 48 (6) ◽  
pp. 06FB02
Author(s):  
Takeshi Miyazaki ◽  
Kunito Hayashi ◽  
Kazuhiko Kobayashi ◽  
Yukio Kuba ◽  
Hisayuki Morita ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Patterned Media

Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media

2013 ◽  
Vol 534 ◽  
pp. 118-121 ◽  
Author(s):  
Zulfakri bin Mohamad ◽  
Rosalena Irma Alip ◽  
Takuya Komori ◽  
Takashi Akahane ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Milling ◽  
Si Substrate ◽  
Patterned Media ◽  
Fine Pitch ◽  
20 Nm ◽  
Magnetic Dot

CoPt magnetic dot arrays with a fine pitch of 30 nm have been fabricated using electron beam (EB) lithography and ion milling. The possibility to ion-mill CoPt film using EB drawn calixarene resist pattern as a mask has been studied. We formed 30 nm pitch resist dot arrays with a dot diameter of 20 nm using 30-keV-EB lithography with calixarene resist. The resist dot arrays were ion-milled for 4 min using 200-eV Ar ion milling to fabricate CoPt dot arrays on a Si substrate. We fabricated fine pitched CoPt magnetic dot arrays with a diameter of 22-35 nm and a pitch of 30-150 nm. Results show that the ion-milled CoPt dot diameter increased with the dot pitch while the resist dot had a similar diameter of 20 nm.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction

Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

1999 ◽  
Vol 35 (15) ◽  
pp. 1283 ◽  
Author(s):  
S. Michel ◽  
E. Lavallée ◽  
J. Beauvais ◽  
J. Mouine
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Lithography Process

scholarly journals Nanooptical elements for visual verification

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Alexander Goncharsky ◽  
Anton Goncharsky ◽  
Dmitry Melnik ◽  
Svyatoslav Durlevich
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Mass Production ◽  
Optical Element ◽  
Visual Image ◽  
Zero Order ◽  
Diffractive Optical Elements ◽  
Optical Elements ◽  
Standard Equipment ◽  
Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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