Ga[sub 2]O[sub 3] grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

M. Holland; C. R. Stanley; W. Reid; R. J. W. Hill; D. A. J. Moran; I. Thayne; G. W. Paterson; A. R. Long

doi:10.1116/1.2778690

Ga[sub 2]O[sub 3] grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2778690 ◽

2007 ◽

Vol 25 (5) ◽

pp. 1706 ◽

Cited By ~ 8

Author(s):

M. Holland ◽

C. R. Stanley ◽

W. Reid ◽

R. J. W. Hill ◽

D. A. J. Moran ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2117 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2117-2121 ◽

Cited By ~ 7

Author(s):

Takashi Uehara ◽

Hiroshi Matsubara ◽

Ryosho Nakane ◽

Satoshi Sugahara ◽

Shin-ichi Takagi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Cited By ~ 3

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2423 ◽

1994 ◽

Vol 33 (Part 1, No. 4B) ◽

pp. 2423-2428 ◽

Cited By ~ 36

Author(s):

Harald Gossner ◽

Ignaz Eisele ◽

Lothar Risch

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Lengths

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Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.4901100 ◽

2014 ◽

Vol 105 (18) ◽

pp. 182106 ◽

Cited By ~ 25

Author(s):

G. J. Brown

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Inversion Channel

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

Applied Physics Letters ◽

10.1063/1.1381566 ◽

2001 ◽

Vol 78 (26) ◽

pp. 4169-4171 ◽

Cited By ~ 77

Author(s):

L.-Å. Ragnarsson ◽

S. Guha ◽

M. Copel ◽

E. Cartier ◽

N. A. Bojarczuk ◽

...

Keyword(s):

Metal Oxide ◽

Yttrium Oxide ◽

Electron Mobility ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Electron

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Molecular beam epitaxy growth of InAs and In[sub 0.8]Ga[sub 0.2]As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2912086 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1187

Author(s):

Ning Li ◽

Eric S. Harmon ◽

David B. Salzman ◽

Dmitri N. Zakharov ◽

Jong-Hyeok Jeon ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Molecular Beam Epitaxy Growth ◽

Effect Transistor

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Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces

Applied Physics Letters ◽

10.1063/1.4793433 ◽

2013 ◽

Vol 102 (9) ◽

pp. 093506 ◽

Cited By ~ 19

Author(s):

C. Merckling

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Reconstructed Surfaces

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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