Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces

C. Merckling

doi:10.1063/1.4793433

Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect-transistors using molecular beam deposited Al2O3 as a gate dielectric on different reconstructed surfaces

Applied Physics Letters ◽

10.1063/1.4793433 ◽

2013 ◽

Vol 102 (9) ◽

pp. 093506 ◽

Cited By ~ 19

Author(s):

C. Merckling

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Reconstructed Surfaces

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Cited By ~ 3

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.4901100 ◽

2014 ◽

Vol 105 (18) ◽

pp. 182106 ◽

Cited By ~ 25

Author(s):

G. J. Brown

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Inversion Channel

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Negative transconductance effect in metal oxide semiconductor field effect transistors fabricated with Ta/sub 2/O/sub 5/ gate dielectric

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) ◽

10.1109/hkedm.2000.904206 ◽

2002 ◽

Author(s):

B.C.M. Lai ◽

J.Y.M. Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack

Applied Physics Letters ◽

10.1063/1.2189456 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132107 ◽

Cited By ~ 67

Author(s):

A. Ritenour ◽

A. Khakifirooz ◽

D. A. Antoniadis ◽

R. Z. Lei ◽

W. Tsai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K

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Off‐state leakage currents in n‐channel metal‐oxide‐semiconductor field‐effect transistors with 10‐nm thermally nitrided and reoxidized nitrided oxides as the gate dielectric

Applied Physics Letters ◽

10.1063/1.105826 ◽

1991 ◽

Vol 59 (23) ◽

pp. 3006-3008 ◽

Cited By ~ 5

Author(s):

S. Fleischer ◽

Z. H. Liu ◽

P. T. Lai ◽

P. K. Ko ◽

Y. C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Leakage Currents

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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric

Applied Physics Letters ◽

10.1063/1.2943186 ◽

2008 ◽

Vol 92 (25) ◽

pp. 253506 ◽

Cited By ~ 22

Author(s):

Han Zhao ◽

Davood Shahrjerdi ◽

Feng Zhu ◽

Hyoung-Sub Kim ◽

Injo OK ◽

...

Keyword(s):

Indium Phosphide ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Energy distribution of interface traps in germanium metal-oxide-semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Applied Physics Letters ◽

10.1063/1.2976632 ◽

2008 ◽

Vol 93 (8) ◽

pp. 083510 ◽

Cited By ~ 9

Author(s):

Ruilong Xie ◽

Nan Wu ◽

Chen Shen ◽

Chunxiang Zhu

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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