In[sub 0.68]Ga[sub 0.32]As∕Al[sub 0.64]In[sub 0.36]As∕InP 4.5 μm quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

Author(s):  
J. Chen ◽  
O. Malis ◽  
A. M. Sergent ◽  
D. L. Sivco ◽  
N. Weimann ◽  
...  
Author(s):  
Klaus H. Ploog

AbstractIn this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.


2015 ◽  
Vol 118 (3) ◽  
pp. 035305 ◽  
Author(s):  
J. Nicolaï ◽  
B. Warot-Fonrose ◽  
C. Gatel ◽  
R. Teissier ◽  
A. N. Baranov ◽  
...  

1997 ◽  
Vol 175-176 ◽  
pp. 22-28 ◽  
Author(s):  
Jérôme Faist ◽  
Federico Capasso ◽  
Carlo Sirtori ◽  
Deborah L. Sivco ◽  
James N. Baillargeon ◽  
...  

Author(s):  
В.В. Мамутин ◽  
Н.А. Малеев ◽  
А.П. Васильев ◽  
Н.Д. Ильинская ◽  
Ю.М. Задиранов ◽  
...  

AbstractThe process of obtaining a modified structure for quantum cascade lasers is studied; this process includes growth using molecular-beam epitaxy, plasma etching, photolithography with the use of liquid etching, and the formation of special contacts for decreasing losses in the waveguide. The use of a special type of structure makes it possible, even without postgrowth overgrowth with a high-resistivity material, to attain parameters satisfying requirements to heterostructures in high-quality quantum cascade lasers at maximal simplification of the entire preparation process.


2009 ◽  
Vol 116 (5) ◽  
pp. 806-813 ◽  
Author(s):  
K. Kosiel ◽  
A. Szerling ◽  
J. Kubacka-Traczyk ◽  
P. Karbownik ◽  
E. Pruszyńska-Karbownik ◽  
...  

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