scholarly journals Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

2015 ◽  
Vol 118 (3) ◽  
pp. 035305 ◽  
Author(s):  
J. Nicolaï ◽  
B. Warot-Fonrose ◽  
C. Gatel ◽  
R. Teissier ◽  
A. N. Baranov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision

2018 ◽  
Vol 52 (5) ◽  
pp. 513
Author(s):  
Klaus H. Ploog
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Physics ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Semiconductor Heterostructures ◽  
Oxide Materials ◽  
Material Interfaces ◽  
Quantum Cascade ◽  
Atomic Precision ◽  
Cascade Lasers

AbstractIn this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.

High power mid-infrared quantum cascade lasers with a molecular beam epitaxy grown InP cladding operating above room temperature

1997 ◽  
Vol 175-176 ◽  
pp. 22-28 ◽  
Author(s):  
Jérôme Faist ◽  
Federico Capasso ◽  
Carlo Sirtori ◽  
Deborah L. Sivco ◽  
James N. Baillargeon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Power ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Mid Infrared ◽  
Quantum Cascade ◽  
Cascade Lasers

scholarly journals Исследование модифицированной структуры квантового каскадного лазера

2018 ◽  
Vol 52 (1) ◽  
pp. 133
Author(s):  
В.В. Мамутин ◽  
Н.А. Малеев ◽  
А.П. Васильев ◽  
Н.Д. Ильинская ◽  
Ю.М. Задиранов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Plasma Etching ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
High Resistivity ◽  
Preparation Process ◽  
High Quality ◽  
Quantum Cascade ◽  
Cascade Lasers

AbstractThe process of obtaining a modified structure for quantum cascade lasers is studied; this process includes growth using molecular-beam epitaxy, plasma etching, photolithography with the use of liquid etching, and the formation of special contacts for decreasing losses in the waveguide. The use of a special type of structure makes it possible, even without postgrowth overgrowth with a high-resistivity material, to attain parameters satisfying requirements to heterostructures in high-quality quantum cascade lasers at maximal simplification of the entire preparation process.

scholarly journals Molecular Beam Epitaxy Growth for Quantum Cascade Lasers

2009 ◽  
Vol 116 (5) ◽  
pp. 806-813 ◽  
Author(s):  
K. Kosiel ◽  
A. Szerling ◽  
J. Kubacka-Traczyk ◽  
P. Karbownik ◽  
E. Pruszyńska-Karbownik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Cascade Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Quantum Cascade ◽  
Cascade Lasers
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