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Molecular beam epitaxy growth of antimonide type-II “W” high-power interband cascade lasers and long-wavelength infrared photodiodes
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.2484728
◽
2007
◽
Vol 25
(3)
◽
pp. 991
◽
Cited By ~ 14
Author(s):
C. S. Kim
◽
C. L. Canedy
◽
E. H. Aifer
◽
M. Kim
◽
W. W. Bewley
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
High Power
◽
Molecular Beam
◽
Molecular Beam Epitaxy Growth
◽
Type Ii
◽
Long Wavelength
◽
Infrared Photodiodes
◽
Interband Cascade Lasers
◽
Long Wavelength Infrared
◽
Cascade Lasers
Download Full-text
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10.1117/12.2068276
◽
2014
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Fangfang Wang
◽
Jianxin Chen
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◽
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◽
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◽
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Type-II InAs∕GaSb superlattices grown on GaSb (311)B by molecular beam epitaxy for long-wavelength infrared applications
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
◽
10.1116/1.2214705
◽
2006
◽
Vol 24
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◽
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◽
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◽
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◽
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◽
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◽
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Molecular Beam Epitaxy
◽
Molecular Beam
◽
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◽
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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.591440
◽
2000
◽
Vol 18
(3)
◽
pp. 1623
◽
Cited By ~ 4
Author(s):
T. C. Hasenberg
◽
P. S. Day
◽
E. M. Shaw
◽
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◽
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◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Wells
◽
Molecular Beam
◽
Laser Diodes
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Infrared Laser
◽
Molecular Beam Epitaxy Growth
◽
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◽
Midwave Infrared
◽
Broken Gap
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Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe
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◽
10.1007/s11664-002-0224-2
◽
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◽
Vol 31
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◽
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◽
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Molecular Beam Epitaxy
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Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates
10.1117/12.665956
◽
2006
◽
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◽
Yuanping Chen
◽
Gregory Brill
◽
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◽
Michael Carmody
◽
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Keyword(s):
Molecular Beam Epitaxy
◽
Molecular Beam
◽
Long Wavelength
◽
Si Substrates
◽
Long Wavelength Infrared
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InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection
10.1117/12.369396
◽
1999
◽
Author(s):
Dao Hua Zhang
◽
W. M. Zhang
◽
P. H. Zhang
◽
T. Osotchan
◽
Soon Fatt Yoon
◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Molecular Beam
◽
Multiple Quantum Well
◽
Infrared Detection
◽
Multiple Quantum
◽
Quantum Well Structures
◽
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◽
Long Wavelength Infrared
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High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers
10.1117/12.311018
◽
1998
◽
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◽
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◽
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◽
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◽
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◽
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◽
High Power
◽
High Efficiency
◽
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◽
Mid Infrared
◽
Interband Cascade Lasers
◽
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Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance
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◽
10.1007/s11664-005-0028-2
◽
2005
◽
Vol 34
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◽
pp. 832-838
◽
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◽
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◽
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◽
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◽
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◽
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Molecular Beam Epitaxy
◽
Molecular Beam
◽
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◽
Long Wavelength
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High-power mid-IR type-II interband cascade lasers
10.1117/12.391912
◽
2000
◽
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◽
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◽
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◽
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◽
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High Power
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Molecular beam epitaxy growth and characterization of type-II InAs/GaSb strained layer superlattices for long-wave infrared detection
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◽
10.1116/1.3276429
◽
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Vol 28
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Type Ii
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◽
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