Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications

2006 ◽  
Vol 24 (5) ◽  
pp. 2205 ◽  
Author(s):  
Jae-Wan Park ◽  
Jong-Wan Park ◽  
Kyooho Jung ◽  
Min Kyu Yang ◽  
Jeon-Kook Lee
Keyword(s):  
Electrical Properties ◽  
Oxygen Content ◽  
Random Access ◽  
Random Access Memory ◽  
Reactive Sputtering ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Applications ◽  
Nio Films

Insertion of a Si layer to reduce operation current for resistive random access memory applications

2013 ◽  
Vol 102 (25) ◽  
pp. 252902 ◽  
Author(s):  
Yu-Ting Chen ◽  
Ting-Chang Chang ◽  
Han-Kuang Peng ◽  
Hsueh-Chih Tseng ◽  
Jheng-Jie Huang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Single-crystalline CuO nanowires for resistive random access memory applications

2015 ◽  
Vol 106 (17) ◽  
pp. 173103 ◽  
Author(s):  
Yi-Siang Hong ◽  
Jui-Yuan Chen ◽  
Chun-Wei Huang ◽  
Chung-Hua Chiu ◽  
Yu-Ting Huang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Single Crystalline ◽  
Cuo Nanowires ◽  
Memory Applications
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