Development of 6.00 Å graded metamorphic buffer layers and high performance In[sub 0.86]Al[sub 0.14]As∕In[sub 0.86]Ga[sub 0.14]As heterojunction bipolar transistor devices

2006 ◽  
Vol 24 (3) ◽  
pp. 1492 ◽  
Author(s):  
A. Cavus ◽  
R. Sandhu ◽  
C. Monier ◽  
C. Cox ◽  
D. Pascua ◽  
...  
Keyword(s):  
High Performance ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Buffer Layers ◽  
Metamorphic Buffer

High-performance InP/InGaAs pnp δ-doped heterojunction bipolar transistor

2005 ◽  
Vol 30 (3) ◽  
pp. 167-169 ◽  
Author(s):  
J.-H. Tsai ◽  
K.-P. Zhu ◽  
Y.-C. Chu ◽  
S.-Y. Chiu
Keyword(s):  
High Performance ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

AlGaAs/GaAs HBTs FOR ANALOG AND DIGITAL APPLICATIONS

1994 ◽  
Vol 05 (03) ◽  
pp. 213-252 ◽  
Author(s):  
KEH-CHUNG WANG ◽  
RANDALL B. NUBLING ◽  
KEN PEDROTTI ◽  
NENG-HAUNG SHENG ◽  
PETER M. ASBECK ◽  
...  
Keyword(s):  
High Speed ◽  
High Performance ◽  
High Accuracy ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Electronic Systems ◽  
Ic Technology

AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) technology has emerged as an important IC technology for high performance electronic systems. Many outstanding circuits have been demonstrated as a result of the AlGaAs/GaAs HBTs high speed, high accuracy and its semi-insulating substrate. Several GaAs HBT manufacturing lines have been established; some of which are shipping products. In this paper, we describe AlGaAs/GaAs HBT technology, summarize some key and representative circuits in analog, A/D conversion and digital applications, and provide prospects of GaAs HBT research.

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