Long-wavelength semiconductor saturable absorber mirrors using metamorphic InP grown on GaAs by molecular beam epitaxy

2006 ◽  
Vol 24 (3) ◽  
pp. 1496
Author(s):  
S. Suomalainen ◽  
A. Vainionpää ◽  
O. Tengvall ◽  
T. Hakulinen ◽  
R. Herda ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Saturable Absorber ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Semiconductor Saturable Absorber

Planar n-on-p ion milled mid-wavelength and long-wavelength infrared diodes on molecular beam epitaxy vacancy-doped CdHgTe on CdZnTe

2002 ◽  
Vol 31 (7) ◽  
pp. 710-714 ◽  
Author(s):  
R. Haakenaasen ◽  
H. Steen ◽  
T. Lorentzen ◽  
L. Trosdahl-Iversen ◽  
A. D. Van Rheenen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Molecular beam epitaxy grown long wavelength infrared HgCdTe on compliant Si substrates

2006 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Nibir K. Dhar ◽  
Michael Carmody ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

Molecular beam epitaxy of strained-layer InAs/GaInSb superlattices for long-wavelength photodetectors

2017 ◽  
Vol 477 ◽  
pp. 86-90 ◽  
Author(s):  
Mikhail Patrashin ◽  
Kouichi Akahane ◽  
Norihiko Sekine ◽  
Iwao Hosako
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strained Layer ◽  
Long Wavelength

Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

1987 ◽  
Vol 51 (18) ◽  
pp. 1431-1432 ◽  
Author(s):  
C. G. Bethea ◽  
M. Y. Yen ◽  
B. F. Levine ◽  
K. K. Choi ◽  
A. Y. Cho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength

GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy

2011 ◽  
Vol 32 (8) ◽  
pp. 083001 ◽  
Author(s):  
Yan Zhu ◽  
Mifeng Li ◽  
Jifang He ◽  
Ying Yu ◽  
Haiqiao Ni ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Long Wavelength
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