Mo∕Al∕Mo∕Au Ohmic contact scheme for Al[sub x]Ga[sub 1−x]N∕GaN high electron mobility transistors annealed at 500 °C

2006 ◽  
Vol 24 (2) ◽  
pp. L16 ◽  
Author(s):  
A. Basu ◽  
F. M. Mohammed ◽  
S. Guo ◽  
B. Peres ◽  
I. Adesida
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

WSiN Cap Layer for Improvement of Ohmic Contact Morphology in AlGaN/GaN High Electron Mobility Transistors

2009 ◽  
Vol 48 (11) ◽  
pp. 111003
Author(s):  
Chung Yu Lu ◽  
Oliver Hilt ◽  
Richard Lossy ◽  
Nidhi Chaturvedi ◽  
Wilfred John ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Cap Layer

Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors

2016 ◽  
Vol 55 (4) ◽  
pp. 040306 ◽  
Author(s):  
Yusuke Takei ◽  
Kazuo Tsutsui ◽  
Wataru Saito ◽  
Kuniyuki Kakushima ◽  
Hitoshi Wakabayashi ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Algan Layer ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Optimization of the ohmic contact processing in InAlN//GaN high electron mobility transistors for lower temperature of annealing

2010 ◽  
Vol 7 (1) ◽  
pp. 108-111 ◽  
Author(s):  
Karol CÌŒicÌŒo ◽  
Dagmar GregusÌŒová ◽  
SÌŒtefan GazÌŒi ◽  
Ján SÌŒoltýs ◽  
Ján Kuzmík ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Lower Temperature ◽  
Contact Processing
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