Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Soon Cho; Gary W. Rubloff; Michael E. Aumer; Darren B. Thomson; Deborah P. Partlow

doi:10.1116/1.2006110

Real-time material quality prediction, fault detection, and contamination control in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process using in situ chemical sensing

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.2006110 ◽

2005 ◽

Vol 23 (5) ◽

pp. 1849 ◽

Cited By ~ 2

Author(s):

Soon Cho ◽

Gary W. Rubloff ◽

Michael E. Aumer ◽

Darren B. Thomson ◽

Deborah P. Partlow

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Deposition Process ◽

Quality Prediction ◽

High Electron ◽

High Electron Mobility ◽

Contamination Control

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In situ chemical sensing in AlGaN∕GaN high electron mobility transistor metalorganic chemical vapor deposition process for real-time prediction of product crystal quality and advanced process control

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1993616 ◽

2005 ◽

Vol 23 (4) ◽

pp. 1386 ◽

Cited By ~ 5

Author(s):

Soon Cho ◽

Gary W. Rubloff ◽

Michael E. Aumer ◽

Darren B. Thomson ◽

Deborah P. Partlow ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Deposition Process ◽

High Electron ◽

High Electron Mobility ◽

Advanced Process Control ◽

Time Prediction

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Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90421-9 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 261-267 ◽

Cited By ~ 6

Author(s):

P. Bove ◽

K. Ono ◽

K. Joshin ◽

H. Tanaka ◽

K. Kasai ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Gaas Layer ◽

High Electron ◽

Chemical Beam Epitaxy ◽

Transistor Structure ◽

High Electron Mobility ◽

Metalorganic Chemical

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δ‐doped AlGaAs and AlGaAs/InGaAs high electron mobility transistor structures grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.107003 ◽

1992 ◽

Vol 60 (19) ◽

pp. 2380-2382 ◽

Cited By ~ 17

Author(s):

G. M. Yang ◽

S. G. Park ◽

K. S. Seo ◽

B. D. Choe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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A δ-doped GaAs/In0.37Ga0.63As/GaAs high electron mobility transistor prepared by low-pressure metalorganic chemical vapor deposition

Solid-State Electronics ◽

10.1016/0038-1101(92)90029-c ◽

1992 ◽

Vol 35 (5) ◽

pp. 635-638 ◽

Cited By ~ 9

Author(s):

W.C. Hsu ◽

H.M. Shieh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Low Pressure ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition growth and thermal stability of the AlInN/GaN high electron mobility transistor structure

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/8/085010 ◽

2011 ◽

Vol 26 (8) ◽

pp. 085010 ◽

Cited By ~ 10

Author(s):

Hongbo Yu ◽

Mustafa Ozturk ◽

Pakize Demirel ◽

Huseyin Cakmak ◽

Basar Bolukbas ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transistor Structure ◽

Chemical Vapor Deposition Growth ◽

High Electron Mobility ◽

Thermal Stability Of ◽

Metalorganic Chemical

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Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.3122347 ◽

2009 ◽

Vol 94 (15) ◽

pp. 153506 ◽

Cited By ~ 22

Author(s):

David F. Brown ◽

Rongming Chu ◽

Stacia Keller ◽

Steven P. DenBaars ◽

Umesh K. Mishra

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200 mm diameter silicon substrates using metal-organic chemical vapor deposition

Semiconductor Science and Technology ◽

10.1088/1361-6641/abc3da ◽

2020 ◽

Vol 36 (1) ◽

pp. 014004

Author(s):

Keitaro Ikejiri ◽

Yuichi Hiroyama ◽

Kenji Kasahara ◽

Chihiro Hirooka ◽

Takenori Osada ◽

...

Keyword(s):

Vapor Deposition ◽

Mass Production ◽

Chemical Vapor ◽

High Electron Mobility Transistor ◽

Organic Chemical ◽

Silicon Substrates ◽

High Electron ◽

High Electron Mobility ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.101851 ◽

1989 ◽

Vol 55 (5) ◽

pp. 457-459 ◽

Cited By ~ 49

Author(s):

M. Razeghi ◽

M. Defour ◽

F. Omnes ◽

M. Dobers ◽

J. P. Vieren ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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Mobility and Charge Density Tuning in Double-Doped Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.5909 ◽

2005 ◽

Vol 44 (8) ◽

pp. 5909-5912 ◽

Cited By ~ 3

Author(s):

Chong-Yi Lee ◽

Hung-Pin Shiao ◽

Kuan-Chu Kuo ◽

Hsin-Yen Wu ◽

Wen-Hsiang Lin

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Metalorganic Chemical

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High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.104886 ◽

1991 ◽

Vol 58 (21) ◽

pp. 2408-2410 ◽

Cited By ~ 123

Author(s):

M. Asif Khan ◽

J. M. Van Hove ◽

J. N. Kuznia ◽

D. T. Olson

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Electron Mobility ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

High Electron ◽

High Electron Mobility ◽

Metalorganic Chemical

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