Extremely high electron mobility in a GaAs‐GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 55 (5) ◽  
pp. 457-459 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
M. Dobers ◽  
J. P. Vieren ◽  
...  
Sign in / Sign up

Export Citation Format

Share Document