Growth optimization of GaAsSb lattice matched to InP by gas-source molecular-beam epitaxy

2005 ◽  
Vol 23 (4) ◽  
pp. 1641 ◽  
Author(s):  
Bing-Ruey Wu ◽  
Chaofeng Xu ◽  
Kuo-Lih Chang ◽  
Kuang-Chien Hsieh ◽  
K. Y. Cheng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Optimization ◽  
Gas Source ◽  
Lattice Matched

Lattice‐matched epitaxial growth of single crystalline 3C‐SiC on 6H‐SiC substrates by gas source molecular beam epitaxy

1992 ◽  
Vol 60 (7) ◽  
pp. 824-826 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Hideaki Mitsui ◽  
Iwao Izumikawa ◽  
Takashi Fuyuki ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Single Crystalline ◽  
Gas Source ◽  
Lattice Matched

scholarly journals Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

1997 ◽  
Vol 19 (4) ◽  
pp. 239-246
Author(s):  
K. K. Wu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Full Width Half Maximum ◽  
Laser Diodes ◽  
Gas Source ◽  
Visible Laser ◽  
Grade Index ◽  
Lattice Matched

Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated. In this report, two kinds of laser structures, the lattice-matched quantum well double heterostructure (DH) and the grade-index separate- confinement heterostructure (GRIN-SCH) stained quantum well structure are characterized. Measurements of photoluminescence (PL) intensity, L-I curves and wavelength spectra of these two structures all exhibit lasing properties. At room temperature, it is found that induced lasing phenomena has a full width half maximum (FWHM) of 2.1 nm and 0.5 nm, respectively. The emitting wavelengths range from 6500 Å to 6850 Å.

Gas Source Molecular Beam Epitaxy of ZnSe on (In,Ga)P

1994 ◽  
Vol 340 ◽  
Author(s):  
K. Lu ◽  
P.A. Fisher ◽  
E. Ho ◽  
J.L. House ◽  
G.S. Petrich ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Critical Thickness ◽  
Buffer Layers ◽  
Ex Situ ◽  
Material System ◽  
Lattice Constants ◽  
Gas Source ◽  
Gaas Substrates ◽  
Lattice Matched

ABSTRACTThe wide bandgap semiconductor ZnSe has been nucleated on epitaxial (In,Ga)P buffer layers (on GaAs substrates) having various In compositions, and hence various lattice constants. The III-V ternary alloy offers a wide range of lattice constants for the heteroepitaxy of a multitude of potential II-VI light emitting devices, such as blue pn injection lasers composed of the (Zn,Mg)(S,Se) material system. Since the II-VI and III-V layers are grown using gas source molecular beam epitaxy in separate dedicated reactors, the technique of amorphous As deposition is employed to passivate the (In,Ga)P surface prior to the ex situ transfer. High resolution double crystal x-ray diffraction measurements on the ZnSe/(In,Ga)P/GaAs heterostructures indicate that for In compositions of 50-52%, the buffer layers with a thickness of 4 μm were only partially relaxed on the GaAs substrates, with the residual mismatch remaining at the ZnSe/III-V heterointerface. The critical thickness of (In,Ga)P, with In concentrations near 52-56%, on GaAs greatly exceeds the predicted critical thickness from either the energy balancing or force balancing model. For an In composition of 56% (and a film thickness of 4 μm), the buffer layers contain an in-plane lattice constant equal to that of ZnSe, and therefore represent the lattice-matched condition, even though the film is not fully relaxed. For (In,Ga)P buffer layers lattice-matched to ZnSe, but mismatched to GaAs, the surface exhibits the expected cross-hatched surface morphology. The occurrence of the cross-hatched surface is significantly alleviated by the addition of a pseudomorphic layer of GaAs positioned between the ZnSe and (In,Ga)P layer.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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