Growth and characterization of Si-doped self-assembled InAs quantum dots

Author(s):  
Jongbum Nah
2005 ◽  
Vol 277-279 ◽  
pp. 1023-1028
Author(s):  
Sung Ho Hwang ◽  
Jung Il Lee ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Il Ki Han ◽  
...  

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.


2005 ◽  
Vol 97 (8) ◽  
pp. 083511 ◽  
Author(s):  
K. P. Chang ◽  
S. L. Yang ◽  
D. S. Chuu ◽  
R. S. Hsiao ◽  
J. F. Chen ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 1020-1024 ◽  
Author(s):  
K. Zhang ◽  
Ch. Heyn ◽  
W. Hansen ◽  
Th. Schmidt ◽  
J. Falta

2014 ◽  
Vol 13 (5) ◽  
pp. 917-925 ◽  
Author(s):  
Sanjay Kumar Jana ◽  
Partha Mukhopadhyay ◽  
Sanjib Kabi ◽  
Nripendra N. Halder ◽  
Ankush Bag ◽  
...  

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  

2005 ◽  
Vol 36 (3-6) ◽  
pp. 227-230 ◽  
Author(s):  
H. Pettersson ◽  
L. Landin ◽  
Ying Fu ◽  
M. Kleverman ◽  
M. Borgström ◽  
...  

2007 ◽  
Vol 18 (S1) ◽  
pp. 191-194 ◽  
Author(s):  
S. I. Jung ◽  
H. Y. Yeo ◽  
I. Yun ◽  
J. Y. Leem ◽  
I. K. Han ◽  
...  

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