Characterization of self-assembled InAs quantum dots with InAlAs∕InGaAs strain-reduced layers by photoluminescence spectroscopy
2005 ◽
Vol 277-279
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pp. 1023-1028
2005 ◽
Vol 23
(3)
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pp. 1047
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1997 ◽
Vol 36
(Part 1, No. 6B)
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pp. 4073-4077
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2001 ◽
Vol 227-228
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pp. 1020-1024
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1998 ◽
Vol 58
(16)
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pp. R10147-R10150
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2014 ◽
Vol 13
(5)
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pp. 917-925
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