Characterization of self-assembled InAs quantum dots with InAlAs∕InGaAs strain-reduced layers by photoluminescence spectroscopy

2005 ◽  
Vol 97 (8) ◽  
pp. 083511 ◽  
Author(s):  
K. P. Chang ◽  
S. L. Yang ◽  
D. S. Chuu ◽  
R. S. Hsiao ◽  
J. F. Chen ◽  
...  
1997 ◽  
Vol 70 (4) ◽  
pp. 505-507 ◽  
Author(s):  
I. E. Itskevich ◽  
M. Henini ◽  
H. A. Carmona ◽  
L. Eaves ◽  
P. C. Main ◽  
...  

2005 ◽  
Vol 277-279 ◽  
pp. 1023-1028
Author(s):  
Sung Ho Hwang ◽  
Jung Il Lee ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Il Ki Han ◽  
...  

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.


1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4073-4077 ◽  
Author(s):  
Igor E. Itskevich ◽  
Thomas Ihn ◽  
Andrew Thornton ◽  
Mohamed Henini ◽  
Humberto de Andrade Carmona ◽  
...  

2001 ◽  
Vol 227-228 ◽  
pp. 1020-1024 ◽  
Author(s):  
K. Zhang ◽  
Ch. Heyn ◽  
W. Hansen ◽  
Th. Schmidt ◽  
J. Falta

1998 ◽  
Vol 58 (16) ◽  
pp. R10147-R10150 ◽  
Author(s):  
Y. Toda ◽  
S. Shinomori ◽  
K. Suzuki ◽  
Y. Arakawa

2014 ◽  
Vol 13 (5) ◽  
pp. 917-925 ◽  
Author(s):  
Sanjay Kumar Jana ◽  
Partha Mukhopadhyay ◽  
Sanjib Kabi ◽  
Nripendra N. Halder ◽  
Ankush Bag ◽  
...  

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  

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