Silicon nitride gate dielectric for top-gated carbon nanotube field effect transistors

2004 ◽  
Vol 22 (6) ◽  
pp. 3112 ◽  
Author(s):  
Shengdong Li ◽  
Zhen Yu ◽  
Peter J. Burke
Keyword(s):  
Carbon Nanotube ◽  
Silicon Nitride ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors

scholarly journals High-Performance Carbon Nanotube Field Effect Transistors with a Thin Gate Dielectric Based on a Self-Assembled Monolayer

Nano Letters ◽  
2007 ◽  
Vol 7 (1) ◽  
pp. 22-27 ◽  
Author(s):  
Ralf Thomas Weitz ◽  
Ute Zschieschang ◽  
Franz Effenberger ◽  
Hagen Klauk ◽  
Marko Burghard ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Self Assembled

scholarly journals High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

2008 ◽  
Vol 10 (10) ◽  
pp. 103019 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
Marina Y Zavodchikova ◽  
J Jussi Toppari ◽  
Albert G Nasibulin ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
High Yield

scholarly journals ELECTRICAL TRANSPORT PROPERTIES AND FIELD EFFECT TRANSISTORS OF CARBON NANOTUBES

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 1-13 ◽  
Author(s):  
HONGJIE DAI ◽  
ALI JAVEY ◽  
ERIC POP ◽  
DAVID MANN ◽  
WOONG KIM ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Electrical Transport Properties

This paper presents a review on our recent work on carbon nanotube field effect transistors, including the development of ohmic contacts, high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. Due to the importance of high current operations of electronic devices, we also review the high field electrical transport properties of nanotubes on substrates and in freely suspended forms. Owing to their unique properties originating from their crystalline 1D structure and the strong covalent carbon–carbon bonding configuration, carbon nanotubes are highly promising as building blocks for future electronics. They are found to perform favorably in terms of ON-state current density as compared to the existing silicon technology, owing to their superb electron transport properties and compatibility with high-κ gate dielectrics. Future directions and challenges for carbon nanotube-based electronics are also discussed.

High-Speed Memory from Carbon Nanotube Field-Effect Transistors with High-κ Gate Dielectric

Nano Letters ◽  
2009 ◽  
Vol 9 (2) ◽  
pp. 643-647 ◽  
Author(s):  
Marcus Rinkiö ◽  
Andreas Johansson ◽  
G. S. Paraoanu ◽  
Päivi Törmä
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
High Speed ◽  
Gate Dielectric ◽  
Field Effect Transistors

scholarly journals Simulations of the CNFETs using different high-k gate dielectrics

2020 ◽  
Vol 9 (3) ◽  
pp. 943-949
Author(s):  
Ankita Dixit ◽  
Navneet Gupta
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Dielectric Materials ◽  
High K ◽  
Gate Dielectric Material

In this paper we presented the analysis of Carbon Nanotube Field Effect Transistors (CNFETs) using various high-k gate dielectric materials. The objective of this work was to choose the best possible material for gate dielectric. This paper also presented the study on the effect of thickness of gate dielectric on the performance of the device. For the analysis (19, 0) CNT was considered because the diameter of (19, 0) CNT is 1.49nm and the CNFETs have been fabricated with the CNT diameter of ~1.5nm. It has been observed that La2O3 is the best gate dielectric material followed by HfO2 and ZrO2. It was also observed that as thickness of gate dielectric material reduces, drain current of CNFET increases. The outcomes of this study matches with the analytical results and hence confirm the results

Sign in / Sign up

Export Citation Format

Share Document