scholarly journals Diffusion barrier properties of metalorganic chemical vapor deposition -WN[sub x] compared with other barrier materials

2004 ◽  
Vol 22 (5) ◽  
pp. 2375 ◽  
Author(s):  
Brad H. Lee ◽  
Kijung Yong
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Barrier Materials ◽  
Metalorganic Chemical

Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition

2002 ◽  
Vol 744 ◽  
Author(s):  
Min Soo Noh ◽  
Jae Hyun Ryou ◽  
Ying-Lan Chang ◽  
Robert Weissman ◽  
Russell D. Dupuis
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Valence Band ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Double Quantum ◽  
Type I ◽  
Barrier Materials ◽  
Metalorganic Chemical

ABSTRACTPseudomorphic GaAs1-xSbx quantum-well (QW) structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD) have been studied with various barrier materials to investigate the energy band lineup. To determine the band lineup of these structures, we have performed low-temperature current-dependent cathodoluminescence (LT-CL) measurements at 10K. For the structure with GaAs barriers, the data show strong evidence of Type-II staggered band lineup, which means that holes are confined in the valence band heavy-hole level of the GaAs1-xSbx quantum well and electrons are confined in the conduction band of the GaAs barrier.For the InGaP barriers, however, we observed only one peak that is related to transitions of a Type-I band lineup. From the LT-CL results, we find that the valence-band discontinuity ratio (Qv) between the GaAs0.73Sb0.27 double quantum wells (DQWs) and the GaAs barriers is ∼1.20. Furthermore, to improve the carrier confinement, we propose that InGaP barriers provide a Type-I band lineup with the GaAsSb QW.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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