Amorphous fluorocarbon polymer (a-C:F) films obtained by plasma enhanced chemical vapor deposition from perfluoro-octane (C8F18) vapor. II. Dielectric and insulating properties

2004 ◽  
Vol 22 (4) ◽  
pp. 1158-1165 ◽  
Author(s):  
Costel Biloiu ◽  
Ioana Arabela Biloiu ◽  
Yosuke Sakai ◽  
Hirotake Sugawara ◽  
Akitsugu Ohta
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fluorocarbon Polymer ◽  
Insulating Properties

scholarly journals Fabrication of Vertically Aligned CNT Composite for Membrane Applications Using Chemical Vapor Deposition throughIn SituPolymerization

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Munir Mohammad ◽  
Mohammad Bilal Khan ◽  
Tauqir A. Sherazi ◽  
Jose Anguita ◽  
Damitha Adikaari
Keyword(s):  
Chemical Vapor Deposition ◽  
Uniform Distribution ◽  
Vapor Deposition ◽  
Spin Coating ◽  
Chemical Vapor ◽  
Vertically Aligned Carbon Nanotubes ◽  
Thermal Chemical Vapor Deposition ◽  
Aligned Carbon Nanotubes ◽  
Fluorocarbon Polymer ◽  
Vertically Aligned

We report the fabrication of vertically aligned carbon nanotubes (CNT) composite using thermal chemical vapor deposition (CVD). A forest of vertically aligned CNTs was grown using catalytic CVD. Fluorocarbon polymer, films were deposited in the spaces between vertically aligned MWCNTs using thermal CVD apparatus developed in-house. The excessive polymer top layer was etched by exposing the sample to water plasma. Infrared spectroscopy confirmed the attachment of functional groups to CNTs. Alignment of CNTs, deposition of polymer and postetched specimens were analyzed by field emission scanning electron microscope (FE-SEM). Uniform distribution of monomodel vertically aligned CNTs embedded in the deposited polymer matrix was observed in the micrograph. Observed uniform distribution otherwise is not possible using conventional techniques such as spin coating.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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