Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy

2004 ◽  
Vol 22 (3) ◽  
pp. 807 ◽  
Author(s):  
L. B. Chang ◽  
P. Y. Kuei ◽  
L. Z. Hsieh ◽  
L. Y. Chang ◽  
R. M. Lin
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Window Layer ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Multiquantum Well

Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy

2007 ◽  
Author(s):  
V. M. Smirnov ◽  
P. J. Batty ◽  
A. Krier ◽  
R. Jones ◽  
V. I. Vasil'ev ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Infrared Light ◽  
Mid Infrared ◽  
Light Emitting

Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy

1988 ◽  
Vol 53 (13) ◽  
pp. 1201-1203 ◽  
Author(s):  
Shiro Sakai ◽  
Shi S. Chang ◽  
Ramu V. Ramaswamy ◽  
Jae‐Hoon Kim ◽  
Gouri Radhakrishnan ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Si Substrates

AlGaInP / AlGaAs double heterostructure light emitting diode grown by liquid phase epitaxy

1994 ◽  
Vol 137 (1-2) ◽  
pp. 240-244 ◽  
Author(s):  
N.Shinichi Takahashi ◽  
Shuta Fujiwara ◽  
Kaoru Kohno ◽  
Eiichi Shibano ◽  
Shoichi Kurita
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Double Heterostructure
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