Effect of Ga-rich growth conditions on the optical properties of GaN films grown by plasma-assisted molecular beam epitaxy

Author(s):  
A. V. Sampath ◽  
G. A. Garrett ◽  
C. J. Collins ◽  
P. Boyd ◽  
J. Choe ◽  
...  
2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.


2015 ◽  
Vol 15 (6) ◽  
pp. 2661-2666 ◽  
Author(s):  
Steven Albert ◽  
Ana Bengoechea-Encabo ◽  
Xiang Kong ◽  
Miguel A. Sánchez-Garcia ◽  
Achim Trampert ◽  
...  

1996 ◽  
Vol 90 (4) ◽  
pp. 785-788 ◽  
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
E. Kurtz ◽  
D. Hommel

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  

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