Effects of molecular beam epitaxy growth conditions on composition and optical properties of InxGa1−xBiyAs1−y

2012 ◽  
Vol 100 (11) ◽  
pp. 112110 ◽  
Author(s):  
Y. Zhong ◽  
P. B. Dongmo ◽  
J. P. Petropoulos ◽  
J. M. O. Zide
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth

Molecular beam epitaxy growth and optical properties of AlN nanowires

2010 ◽  
Vol 96 (6) ◽  
pp. 061912 ◽  
Author(s):  
O. Landré ◽  
V. Fellmann ◽  
P. Jaffrennou ◽  
C. Bougerol ◽  
H. Renevier ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth

scholarly journals Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate

2011 ◽  
Vol 2011 ◽  
pp. 1-5
Author(s):  
Faouzi Saidi ◽  
Mouna Bennour ◽  
Lotfi Bouzaïene ◽  
Larbi Sfaxi ◽  
Hassen Maaref
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
High Energy ◽  
Biaxial Strain ◽  
High Energy Electron ◽  
Inas Quantum Dots ◽  
Small Quantum

We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

scholarly journals Correlation among Growth Conditions, Morphology, and Optical Properties of Nanocolumnar InGaN/GaN Heterostructures Selectively Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 15 (6) ◽  
pp. 2661-2666 ◽  
Author(s):  
Steven Albert ◽  
Ana Bengoechea-Encabo ◽  
Xiang Kong ◽  
Miguel A. Sánchez-Garcia ◽  
Achim Trampert ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions

scholarly journals GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

2008 ◽  
Vol 1080 ◽  
Author(s):  
Kevin Goodman ◽  
Kejia Wang ◽  
Xiangning Luo ◽  
John Simon ◽  
Tom Kosel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Molecular Beam Epitaxy Growth ◽  
Growth Time ◽  
Band Edge Emission ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Microscopy Images

ABSTRACTMolecular beam epitaxy growth of GaN and InGaN nanowires is accomplished on Si (111) substrates using Ga-droplet nucleation. Typical diameters range from 25-80 nm and lengths can be varied by increasing the growth time; the growth rate is ∼0.25 microns/hour. The nanowires have been characterized structurally and optically. Photoluminescence spectra show band-edge emission of GaN nanowires centered at 362 nm at 290 K. Transmission electron microscopy images unveil that the nanowires are highly crystalline, and grow along the 0001 polar direction. Indium has also been successfully incorporated into GaN nanowires by modifying the growth conditions; the InGaN nanowires emit at ∼520 nm, which provides a possible route to solving strain related problems of high In-composition InGaN based efficient green emitters.

scholarly journals Influence of Growth Conditions on Optical Properties of ZnCdSe/ZnSe Quantum Wells Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 90 (4) ◽  
pp. 785-788 ◽  
Author(s):  
M. Godlewski ◽  
J.P. Bergman ◽  
B. Monemar ◽  
E. Kurtz ◽  
D. Hommel
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Growth Conditions
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