X-ray diffraction analyses of titanium coatings produced by electron beam evaporation in neon and argon inert gases

2003 ◽  
Vol 21 (5) ◽  
pp. 1702-1707 ◽  
Author(s):  
J. C. Avelar-Batista ◽  
A. D. Wilson ◽  
A. Davison ◽  
A. Matthews ◽  
K. S. Fancey
Keyword(s):  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Inert Gases ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Coatings

Interface Structure and Solid State Reactions of Fe/Zr Multilayers

1987 ◽  
Vol 103 ◽  
Author(s):  
Bruce M. Clemens ◽  
D. L. Williamson
Keyword(s):  
Electron Beam ◽  
Auger Spectroscopy ◽  
Interface Structure ◽  
Electron Beam Evaporation ◽  
Sputter Deposition ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited ◽  
Amorphous Phase Formation

ABSTRACTIron zirconium multilayer films were prepared by electron beam evaporation and by sputter deposition. Layer thicknesses were varied from 50 monolayers of each constituent down to 2 monolayers. Conversion electron Mössbauer spectroscopy, x-ray diffraction, and Auger spectroscopy have been used to characterize multilayers in the as-deposited and annealed state. Amorphous phase formation occurs during thermal anneals, and samples with layer thicknesses of 5 monolayers or less of each constituent are amorphous as deposited. Amorphous interfaces are observed in all samples, with this interface region being larger in the electron beam evaporated samples than in the sputter deposited samples.

Characterization of Nd:Y3Al5O12 Thin Films Prepared by Electron Beam Evaporation Deposition

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Room Temperature ◽  
Electron Beam Evaporation ◽  
Photoluminescence Spectra ◽  
X Ray Diffraction ◽  
X Ray ◽  
Surface Morphologies ◽  
Ingaas Detector

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

Epitaxial Growth of Ni on Si by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
K. S. Grabowski ◽  
R. A. Kant ◽  
S. B. Qadr
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Crystallographic Texture ◽  
Room Temperature ◽  
Ion Beam ◽  
Sample Surface ◽  
Electron Beam Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition

ABSTRACTEpitaxial Ni films were grown on Si(111) substrates to a thickness of about 500 nm by ion beam assisted deposition at room temperature. The films were grown using 25-keV-Ni ions and electron-beam evaporation of Ni at a relative arrival ratio of one ion for every 100 Ni vapor atoms. The ion beam and evaporant flux were both incident at 45° to the sample surface. Standard θ-2θ X-ray diffraction scans revealed the extent of crystallographic texture, while Ni {220} pole figure measurements identified the azimuthal orientation of Ni in the plane of the film. Films grown without the ion beam consisted of nearly randomly oriented fine grains of Ni whereas with bombardment the Ni (111) plane was found parallel to the Si (111) plane. In all the epitaxial cases the Ni [110] direction was perpendicular to the axis of the ion beam, suggesting that the azimuthal orientation of the film was determined by channeling of the ion beam down {110} planar channels in the Ni film. Additional experiments with different ions, energies, and substrates revealed their influence on the degree of epitaxy obtained.

Epitaxial growth of Fe/Mo/Fe(111) and Fe/Cr/Fe(111) on Si(111)

1993 ◽  
Vol 8 (7) ◽  
pp. 1567-1571 ◽  
Author(s):  
Yang-Tse Cheng ◽  
Yen-Lung Chen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Body Centered Cubic ◽  
X Ray Diffraction ◽  
Direction Parallel ◽  
X Ray ◽  
Transmission Electron ◽  
Low Temperature Epitaxy

Epitaxial body-centered cubic Mo and Cr films have been grown on the (111) surface of α–Fe films on Si(111) at 300 and 575 K by electron beam evaporation in ultrahigh vacuum. X-ray diffraction and transmission electron microscopy show that the Mo films are oriented with the (111) plane parallel to the α-Fe(111) plane and with the Mo[1$\overline 1$0] direction parallel to the Fe[1$\overline 1$0] direction in the plane of the substrate. The same orientation relationship holds for the Cr films epitaxially grown on α-Fe(111) surfaces. Epitaxial Fe(111)/Mo(111)/Fe(111) and Fe(111)/Cr(111)/Fe(111) films have also been grown on Si(111). This work provides new examples of low temperature epitaxy which can occur at a substrate temperature as low as 0.1 times the melting temperature of the deposited materials.

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

Effects of Electron Beam on Structure and Physical Properties of Natural Colorless Topaz

2015 ◽  
Vol 1125 ◽  
pp. 60-63
Author(s):  
Chutharat Paikaew ◽  
Juthamas Inthanont ◽  
Adisak Punyanut ◽  
Ekachai Hoonnivathana ◽  
Pichet Limsuwan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Beam ◽  
Physical Properties ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Resonance ◽  
Function Group ◽  
And Function ◽  
Beam Dose

The purpose of this research was to investigate physical properties, configuration and color of topaz. Topazes were irradiated with electron beam linear accelerator at different dose from 40 to 180 MGy. The color of topaz was analyzed by UV-vis and it was shown that the color of topaz was becoming strong color with increased electron beam dose. Crystal structure and function group of topaz were characterized by X- ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. The results showed that the topaz has orthorhombic structure and no other crystalline. After irradiated, topaz released OH indicating higher crystallinity of topaz and this was confirmed with the results of electron spin resonance (ESR). Electron beam dose response of topaz was investigated. ESR results showed that the Al3+ ion was substituted in Si4+ site and Ti3+ impurity in Al4+ site and this result corresponds to the results of FTIR. The experiment result indicated that electron beam could be making defect on crystal structure and color enhancement of topaz.

X-ray Line Broadening Analysis of Tl-Superconducting Films

1989 ◽  
Vol 33 ◽  
pp. 145-151
Author(s):  
M. O. Eatough ◽  
D. S. Ginley ◽  
B. Morosin
Keyword(s):  
Thin Films ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Superconducting Thin Films ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Densities ◽  
Diffraction Peaks ◽  
Sequential Electron

AbstractSuperconducting thin films (0.3-0.7μm) in the TI-Ca-Ba-Cu-0 system have been prepared on various single crystal substrates by sequential electron beam evaporation followed by appropriate sintering and annealing. Oxygen-annealed films show Tc as high as 110K and critical current densities to 600,000 A/cm2. X-ray diffraction analyses of these films show predominantly the Tl2Ca2Ba2Cu2O10 phase (c-parameter near 36Å), but some also contain up to 50 at% of the Tl2CaBa2Cu2O8 phase (c-parameter near 30Å). The complete absence of hkl reflections other than 00I demonstrates the highly oriented nature of the films as well as the absence of other Tl phases. The diffraction peaks are noticeably broader for the 36Å phase than for the 30Å phase. For a 0.7μm film such broadening is consistent with coherent sizes along the c-axis of 1200 - 1400Å and 500Å, respectively, for the 30Å and 36Å phases, and of strain values near 1.4-1.8 x 10-3 for both phases.

Transient Phase Formation During the Growth of Epitaxial CoSi2 by Annealing of Co/Ti Bi-Layers on (100) Si

1995 ◽  
Vol 402 ◽  
Author(s):  
D. J. Miller ◽  
T. I. Selinder ◽  
K. E. Gray
Keyword(s):  
Electron Microscopy ◽  
Reaction Pathway ◽  
Spinel Phase ◽  
Analytical Electron Microscopy ◽  
Inert Gases ◽  
Native Oxide ◽  
Transient Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analytical Electron

AbstractPhase evolution during the annealing of Co/Ti bi-layers on (100) Si has been studied by x-ray diffraction and analytical electron microscopy. X-ray diffraction performed in situ during annealing revealed a reaction pathway involving the formation of a transient phase when epitaxial CoSi2 films were grown. Analytical electron microscopy was used to identify this phase as a spinel-related phase, isostructural with Co2TiO4. This phase grows as a result of the presence of the Ti interlayer and a small amount of oxygen from the annealing ambient. Annealing in vacuum or other purified inert gases yielded polycrystalline CoSi2 films which form via a different reaction pathway that does not involve a spinel phase. This spinel phase may serve both to reduce the native oxide from the underlying Si substrate and to control interdiffusion between Si and Co during the reaction, thereby promoting epitaxial growth.

REALIZATION AND CHARACTERIZATION OF e-BEAM COMPLETELY EVAPORATED BSCCO THIN FILMS

1991 ◽  
Vol 05 (18) ◽  
pp. 1203-1211 ◽  
Author(s):  
C. ATTANASIO ◽  
L. MARITATO ◽  
A. NIGRO ◽  
S. PRISHEPA ◽  
R. SCAFURO
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Single Crystal ◽  
Critical Current ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Reliable Technique ◽  
X Ray ◽  
Eds Analysis

BSCCO thin films with T c (R = 0) higher than 80 K have been routinely prepared using a simple and reliable technique in which we completely electron beam evaporated weighted amounts of bulk pellets. The films were grown on MgO single crystal (100) substrates and showed, after an ex-situ annealing at high temperatures (840–880° C) for several hours, a strong preferential orientation with the c-axis perpendicular to the plane of the substrate. The films were characterized by Θ − 2Θ X-ray diffraction and EDS analysis and by paraconductivity and critical current measurements.

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