Effect of thermal annealing on the electronic properties of nitrogen doped amorphous carbon/p-type crystalline silicon heterojunction diodes

2003 ◽  
Vol 21 (3) ◽  
pp. 582-588 ◽  
Author(s):  
L. Valentini ◽  
L. Lozzi ◽  
V. Salerni ◽  
I. Armentano ◽  
J. M. Kenny ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Thermal Annealing ◽  
Amorphous Carbon ◽  
Crystalline Silicon ◽  
Nitrogen Doped ◽  
Heterojunction Diodes ◽  
P Type

Effects of fluorine incorporation on the properties of amorphous carbon/p-type crystalline silicon heterojunction diodes

2003 ◽  
Vol 321 (3) ◽  
pp. 175-182 ◽  
Author(s):  
L. Valentini ◽  
V. Salerni ◽  
I. Armentano ◽  
J.M. Kenny ◽  
L. Lozzi ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Crystalline Silicon ◽  
Heterojunction Diodes ◽  
P Type

Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

2015 ◽  
Vol 1734 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Hiroki Gima ◽  
Sausan Al-Riyami ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Nitrogen Content ◽  
Amorphous Carbon ◽  
Voltage Measurement ◽  
Mixed Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Heterojunction Diodes ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTNitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content.

Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes

1995 ◽  
Vol 42 (4) ◽  
pp. 577-585 ◽  
Author(s):  
V.S. Veerasamy ◽  
G.A.J. Amaratunga ◽  
J.S. Park ◽  
H.S. MacKenzie ◽  
W.I. Milne
Keyword(s):  
Amorphous Carbon ◽  
Crystalline Silicon ◽  
Tetrahedral Amorphous Carbon ◽  
Heterojunction Diodes ◽  
P Type

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Structural Analysis of Boron- and Nitrogen-Doped Amorphous Carbon Films from Bio-Product

2020 ◽  
Vol 860 ◽  
pp. 190-195
Author(s):  
Irma Septi Ardiani ◽  
Khoirotun Nadiyyah ◽  
Anna Zakiyatul Laila ◽  
Sarayut Tunmee ◽  
Hideki Nakajima ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Amorphous Carbon ◽  
Carbon Film ◽  
Carbon Films ◽  
Basic Material ◽  
Carbon Phase ◽  
Amorphous Carbon Film ◽  
Amorphous Carbon Films ◽  
Nitrogen Doped ◽  
P Type

Amorphous carbon films have been explored and used in a wide variety of applications. With the n-type and p-type amorphous carbon film, it can be used to make p-n junctions for solar cells. This research aims to study the structure of boron- and nitrogen-doped amorphous carbon (a-C:B and a-C:N) films. This research uses the basic material of bio-product from palmyra sugar to form amorphous carbon. Amorphous carbon was synthesized by heating the palmyra sugar at 250°C. The results of XRD showed that the doped films produce an amorphous carbon phase. PES was used to analyze the bonding state of dopants in the sample. B4C, BC3, and BC2O bonds formed in a-C:B, while pyridine and pyrrolic formed in a-C:N.

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