Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes

1995 ◽  
Vol 42 (4) ◽  
pp. 577-585 ◽  
Author(s):  
V.S. Veerasamy ◽  
G.A.J. Amaratunga ◽  
J.S. Park ◽  
H.S. MacKenzie ◽  
W.I. Milne
Keyword(s):  
Amorphous Carbon ◽  
Crystalline Silicon ◽  
Tetrahedral Amorphous Carbon ◽  
Heterojunction Diodes ◽  
P Type

Effects of fluorine incorporation on the properties of amorphous carbon/p-type crystalline silicon heterojunction diodes

2003 ◽  
Vol 321 (3) ◽  
pp. 175-182 ◽  
Author(s):  
L. Valentini ◽  
V. Salerni ◽  
I. Armentano ◽  
J.M. Kenny ◽  
L. Lozzi ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Crystalline Silicon ◽  
Heterojunction Diodes ◽  
P Type

Photoresponse characteristics ofn‐type tetrahedral amorphous carbon/p‐type Si heterojunction diodes

1994 ◽  
Vol 64 (17) ◽  
pp. 2297-2299 ◽  
Author(s):  
V. S. Veerasamy ◽  
G. A. J. Amaratunga ◽  
J. S. Park ◽  
W. I. Milne ◽  
H. S. MacKenzie ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Tetrahedral Amorphous Carbon ◽  
Heterojunction Diodes ◽  
P Type

Tetrahedral Amorphous Carbon Thin Film Transistors

1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Undoped Material ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type ◽  
Amorphous Carbon Thin Film

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

2015 ◽  
Vol 1734 ◽  
Author(s):  
Abdelrahman Zkria ◽  
Hiroki Gima ◽  
Sausan Al-Riyami ◽  
Tsuyoshi Yoshitake
Keyword(s):  
Nitrogen Content ◽  
Amorphous Carbon ◽  
Voltage Measurement ◽  
Mixed Gas ◽  
Hydrogenated Amorphous Carbon ◽  
Nitrogen Doped ◽  
Ultrananocrystalline Diamond ◽  
Heterojunction Diodes ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTNitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content.

Influence of Film Thickness on Intrinsic Growth Stress and Raman Evaluation of Tetrahedral Amorphous Carbon Films

2005 ◽  
Vol 475-479 ◽  
pp. 3627-3630
Author(s):  
Jia Qi Zhu ◽  
Jie Cai Han ◽  
Song He Meng ◽  
Xiao Dong He ◽  
Manlin Tan ◽  
...  
Keyword(s):  
Film Thickness ◽  
Raman Spectra ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Growth Stress ◽  
Intrinsic Stress ◽  
Vacuum Arc ◽  
Tetrahedral Amorphous Carbon ◽  
Filtered Cathodic Vacuum Arc ◽  
P Type

To investigate the effects of film thickness on Raman characterization and intrinsic stress of tetrahedral amorphous carbon and ascertain the correlations between stress and Raman spectra, the ta-C films with different film thickness were deposited on the polished P-type (100) c-silicon substrate with the same conditions by the filtered cathodic vacuum arc technology. The film thickness was measured by the surface profiler and the atomic force microscope; stress was calculated according to the curvature of the stress samples examined by the surface profiler; the microstructure of the films was characterized by the Ramanscope. It has been shown that the stress drops down continuously and the dropping rate turns mild with the increase of film thickness. When the film thickness surpasses 30 nm, the compressive stress is kept at less than 5 GPa. The intensity of the first and second order peak of the c-Si substrate in the visible Raman spectra gradually depresses with the increase of thickness. However, the FWHM is minimal and the maximal intensity is highest from 50 nm to 80 nm, accordingly the clearest Raman signals can be acquired in this scale. Additionally, the position of the asymmetric broad peak gradually shifts towards the lower wavenumber with the increase of thickness and the decease of intrinsic stress.

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