Investigation of active Si pitting and its impact on 0.15 and 0.30 μm n-type metal–oxide–semiconductor and p-type metal–oxide–semiconductor transistors

2002 ◽  
Vol 20 (6) ◽  
pp. 2288 ◽  
Author(s):  
C. S. Chua ◽  
E. F. Chor ◽  
F. Goh ◽  
A. See ◽  
L. Chan
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Flicker Noise ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type ◽  
Strained Sige

Hole Trapping in the NBTI Characteristic of SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Threshold Voltage Shift ◽  
Hole Trapping ◽  
Primary Mechanism ◽  
Capacitance Voltage ◽  
Cv Measurements ◽  
P Type

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.

Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2001 ◽  
Vol 79 (20) ◽  
pp. 3344-3346 ◽  
Author(s):  
Minjoo L. Lee ◽  
C. W. Leitz ◽  
Z. Cheng ◽  
A. J. Pitera ◽  
T. Langdo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type

Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices

2011 ◽  
Vol 50 (9) ◽  
pp. 090201
Author(s):  
Masato Noborio ◽  
Michael Grieb ◽  
Anton J. Bauer ◽  
Dethard Peters ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Oxides ◽  
P Type
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