Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates

2001 ◽  
Vol 79 (20) ◽  
pp. 3344-3346 ◽  
Author(s):  
Minjoo L. Lee ◽  
C. W. Leitz ◽  
Z. Cheng ◽  
A. J. Pitera ◽  
T. Langdo ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type

Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

2009 ◽  
Vol 48 (4) ◽  
pp. 04C036 ◽  
Author(s):  
San-Lein Wu ◽  
Chung Yi Wu ◽  
Hau-Yu Lin ◽  
Cheng-Wen Kuo ◽  
Shin-Hsin Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Flicker Noise ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
P Type ◽  
Strained Sige

Drive current enhancement in p-type metal–oxide–semiconductor field-effect transistors under shear uniaxial stress

2004 ◽  
Vol 85 (25) ◽  
pp. 6188-6190 ◽  
Author(s):  
L. Shifren ◽  
X. Wang ◽  
P. Matagne ◽  
B. Obradovic ◽  
C. Auth ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Uniaxial Stress ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Drive Current ◽  
P Type

Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x

2001 ◽  
Vol 79 (25) ◽  
pp. 4246-4248 ◽  
Author(s):  
C. W. Leitz ◽  
M. T. Currie ◽  
M. L. Lee ◽  
Z.-Y. Cheng ◽  
D. A. Antoniadis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Strained Si ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document