Atomic resolution imaging of a single-crystal Cu (100) surface by scanning tunneling microscopy in ultrahigh vacuum at room temperature

2002 ◽  
Vol 20 (4) ◽  
pp. 1567 ◽  
Author(s):  
Z. Q. Zou ◽  
Z. C. Dong ◽  
A. S. Trifonov ◽  
H. Nejo
Keyword(s):  
Single Crystal ◽  
Scanning Tunneling Microscopy ◽  
Room Temperature ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Resolution Imaging

STM Study of Initial Growth of Titanium Silicide on Si(III)

1996 ◽  
Vol 466 ◽  
Author(s):  
H. Kuriyama ◽  
S. Ohara ◽  
K. Ezoe ◽  
T. Yamamoto ◽  
S. Tatsukawa ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Room Temperature ◽  
Ultrahigh Vacuum ◽  
Titanium Silicide ◽  
Scanning Tunneling ◽  
Initial Growth ◽  
Tunneling Microscopy

ABSTRACTThe nucleation and initial growth of titanium suicide on Si(111)7×7 surface has been studied using the scanning tunneling microscopy(STM) in ultrahigh vacuum. At room temperature Ti atoms react with Si atoms and preferentially adsorb on faulted half of the 7×7 surface. By annealing at 600°C, islandlike structures(amorphous titanium suicide) and striplike structures(crystalline titanium suicide) are formed. Annealing at 700°C drives the growth of striplike structures from islandlike structures. The striplike structures grow parallel to specific directions on the 7×7 surface.

STM observation of formation process of carbon nanotube from 6H-SiC (000-1)

2005 ◽  
Vol 901 ◽  
Author(s):  
Takahiro Maruyama ◽  
Yasuyuki Kawamura ◽  
Hyungjin Bang ◽  
Naomi Fujita ◽  
Tomoyuki Shiraiwa ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Scanning Tunneling Microscopy ◽  
Formation Process ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Carbon Networks ◽  
Thermally Treated

AbstractFormation process of nanosized cap structures on a thermally treated 6H-SiC(000-1) substrate was investigated using atomic-resolution ultrahigh-vacuum scanning tunneling microscopy (UHV-STM). After formation of clusters of carobon particles 1-2 nanometer in diameter at 1150°C, these nanoparticles merged, forming nanosized cap structures. Hexagonal carbon networks, partly composed of pentagons, were clearly observed on the surface of the cap structures for a sample annealed above 1200°C. A model for the formation of carbon nanocaps on 6H-SiC(000-1) was proposed.

scholarly journals Atomic-Resolution Imaging of Close-Packed Metal Surfaces by Scanning Tunneling Microscopy

1989 ◽  
Vol 62 (1) ◽  
pp. 59-62 ◽  
Author(s):  
J. Wintterlin ◽  
J. Wiechers ◽  
H. Brune ◽  
T. Gritsch ◽  
H. Höfer ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Metal Surfaces ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Resolution Imaging

Surface of Room-Temperature-Stable Electride [Ca24Al28O64]4+(e−)4: Preparation and Its Characterization by Atomic-Resolution Scanning Tunneling Microscopy

ACS Nano ◽  
2011 ◽  
Vol 5 (3) ◽  
pp. 1907-1914 ◽  
Author(s):  
Yoshitake Toda ◽  
Yousuke Kubota ◽  
Masahiro Hirano ◽  
Hiroyuki Hirayama ◽  
Hideo Hosono
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Room Temperature ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

In Situ Cross-Sectional Scanning Tunneling Microscopy Sample Preparation Technique

1995 ◽  
Vol 399 ◽  
Author(s):  
Y.-C. Kim ◽  
M. J. Nowakowski ◽  
D. N. Seidman
Keyword(s):  
Sample Preparation ◽  
Scanning Tunneling Microscopy ◽  
Ultrahigh Vacuum ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Preparation Technique ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Sample Preparation Technique

ABSTRACTA novel in situ sample cleavage technique has been developed for fabricating specimens for cross-sectional scanning tunneling microscopy (XSTM) applications. This technique can be easily adapted to any ultrahigh vacuum (UHV) STM that has a coarse motion capability. A conducting diamond STM tip is used to create micron long scratches on Ge/GaAs or GaAs {001 }-type surfaces. These {001} surfaces are imaged with STM to observe scratch characteristics, and GaAs samples are cleaved to reveal {110}-type faces. Atomic resolution images of {110}-type GaAs surfaces are readily and reproducibly obtained.

Sign in / Sign up

Export Citation Format

Share Document