Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H[sub 2] plasma treatment

2002 ◽  
Vol 20 (4) ◽  
pp. 1476 ◽  
Author(s):  
Jia-Min Shieh ◽  
Kou-Chiang Tsai ◽  
Bau-Tong Dai ◽  
Yew-Chung Wu ◽  
Yu-Hen Wu
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Amorphous Carbon Films ◽  
Low Dielectric

Modifications of Low Dielectric Constant Fluorinated Amorphous Carbon Films by Multiple Plasma Treatments

2002 ◽  
Vol 149 (7) ◽  
pp. G384 ◽  
Author(s):  
Jia-Min Shieh ◽  
Kou-Chiang Tsai ◽  
Bau-Tong Dai ◽  
Shih-Chin Lee ◽  
Chih-Hung Ying ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Amorphous Carbon ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Amorphous Carbon Films ◽  
Low Dielectric ◽  
Plasma Treatments

Spectroscopic Studies of Low Dielectric Constant Fluorinated Amorphous Carbon Films for Ulsi Integrated Circuits

1998 ◽  
Vol 524 ◽  
Author(s):  
Yanjun Ma ◽  
Hongning Yang ◽  
J. Guo ◽  
C. Sathe ◽  
A. Agui ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Spectroscopic Studies ◽  
Carbon Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
On Chip ◽  
Rc Delay

ABSTRACTPerformance of future generations of integrated circuits will be limited by the RC delay caused by on-chip interconnections. Overcoming this limitation requires the deployment of new high conductivity metals such as copper and low dielectric constant intermetal dielectrics (IMD). Fluorinated amorphous carbon (a-CFx) is a promising candidate for replacing SiO2 as the IMD. In this paper we investigated the structure and electronic properties of a-CFx thin films using high-resolution x-ray absorption, emission, and photoelectron spectroscopy. The composition and local bonding information were obtained and correlated with deposition conditions. The data suggest that the structure of the a-CFx is mostly of carbon rings and CF2 chains cross-linked with C atoms. The effects of growth temperature on the structure and the thermal stability of the film are discussed.

scholarly journals In-Situ Repair Plasma-Induced Damage and Cap Dielectric Barrier for Porous Low-Dielectric-Constant Materials by HMDS Plasma Treatment

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 314
Author(s):  
Chih-Yen Lee ◽  
Chi-Yang Yan ◽  
Yi-Lung Cheng
Keyword(s):  
Dielectric Constant ◽  
Plasma Treatment ◽  
Metal Ion ◽  
Treatment Time ◽  
Advanced Technology ◽  
Low Dielectric Constant ◽  
Plasma Damage ◽  
Low Dielectric ◽  
Low K

Plasma damage and metal ion penetration are critical issues for porous low-dielectric-constant (low-k) materials used in the back-end-of-line interconnects. This study proposed a novel process with in-situ repairing plasma-induced damage and capping a barrier for porous low-k materials by Hexamethyldisilazane (HDMS) plasma treatment. For a plasma-damaged porous low-k material, its surface hydrophilic state was transformed to hydrophobic state by HDMS plasma treatment, revealing that damage was repaired. Simultaneously, a dielectric film was capped onto the porous low-k material, and displayed better barrier capability against Cu migration. Additionally, the breakdown reliability of the stacked dielectric was enhanced by the means of HDMS plasma treatment. The optimized HDMS plasma treatment time was found to be 10 s. Therefore, this proposed HDMS plasma treatment processing is a promising technique for highly applicable low-k material used for advanced technology nodes.

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