Morphology and electronic transport of polycrystalline silicon films deposited by SiF4/H2 at a substrate temperature of 200 °C

2002 ◽  
Vol 20 (3) ◽  
pp. 790-796 ◽  
Author(s):  
Sukti Hazra ◽  
Sumita Mukhopadhyay ◽  
Swati Ray
Keyword(s):  
Substrate Temperature ◽  
Electronic Transport ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Structure of Annealed Polycrystalline Silicon Films. I. Recrystallization

1986 ◽  
Vol 98 (2) ◽  
pp. 383-390 ◽  
Author(s):  
F. L. Edelman ◽  
J. Heydenreich ◽  
D. Hoehl ◽  
J. Matthäi ◽  
I. Melnik ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Stresses in thin polycrystalline silicon films

1988 ◽  
Vol 162 ◽  
pp. 365-374 ◽  
Author(s):  
V.M. Koleshko ◽  
V.F. Belitsky ◽  
I.V. Kiryushin
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Thin Polycrystalline ◽  
Polycrystalline Silicon Films

Fast and non-destructive assessment of epitaxial quality of polycrystalline silicon films on glass by optical measurements

2004 ◽  
Vol 265 (1-2) ◽  
pp. 168-173 ◽  
Author(s):  
Axel Straub ◽  
Per I. Widenborg ◽  
Alistair Sproul ◽  
Yidan Huang ◽  
Nils-Peter Harder ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Optical Measurements ◽  
Polycrystalline Silicon Films ◽  
Non Destructive

Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing

1995 ◽  
Vol 66 (11) ◽  
pp. 1394-1396 ◽  
Author(s):  
R. Carluccio ◽  
J. Stoemenos ◽  
G. Fortunato ◽  
D. B. Meakin ◽  
M. Bianconi
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
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