Morphological transitions of Si1−xGex films growing on Si(100). I. Gas-source molecular-beam epitaxy: From two-dimensional growth to growth in the Stranski–Krastanov mode

2002 ◽  
Vol 20 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Housei Akazawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Gas Source ◽  
Morphological Transitions ◽  
Dimensional Growth

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy

1995 ◽  
Vol 6 (5) ◽  
pp. 330-335 ◽  
Author(s):  
J. M. Fern�ndez ◽  
A. Matsumura ◽  
X. M. Zhang ◽  
M. H. Xie ◽  
L. Hart ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Gas Source

Growth of Quaternary AlInGaN/GaN Heterostructures by Plasma Assisted MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
E. Monroy ◽  
N. Gogneau ◽  
D. Jalabert ◽  
F. Enjalbert ◽  
E. Bellet-Amalnc ◽  
...  
Keyword(s):  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Growth Front ◽  
Two Dimensional ◽  
High Binding Energy ◽  
Dimensional Growth

ABSTRACTEpitaxial growth of quaternary AlGalnN compounds by plasma-assisted molecular beam epitaxy has been demonstrated. Two-dimensional growth is achieved under In excess, with a monolayer of In segregating at the growth front. The maximum In incorporation is significantly affected by the substrate temperature and the Al mole fraction of the alloy. This behavior has been attributed to the enhancement of In segregation due to the high binding energy of A1N compared to InN and GaN.

Optimized Molecular Beam Epitaxy Structures for GaAs on Silicon Photodetectors

1989 ◽  
Vol 158 ◽  
Author(s):  
A. Christou ◽  
N.A. Papanicolaou ◽  
G.W. Anderson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Dimensional Growth

ABSTRACTTwo dimensional growth of GaAs on silicon has been achieved by modulation molecular beam epitaxy (where the arsenic beam is pulsed) with laser assistance at 308 nm (LAMBE). Photoconductive, low doping concentration layers were utilized for metal-semiconductormetal photodetectors which were evaluated at 840 nm.

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