Fabrication of microfluidic devices in silicon and plastic using plasma etching

Author(s):  
D. F. Weston ◽  
T. Smekal ◽  
D. B. Rhine ◽  
J. Blackwell
The Analyst ◽  
2020 ◽  
Vol 145 (5) ◽  
pp. 1629-1635 ◽  
Author(s):  
Stan B. J. Willems ◽  
Jaccoline Zegers ◽  
Anton Bunschoten ◽  
R. Martijn Wagterveld ◽  
Fijs W. B. van Leeuwen ◽  
...  

Plasma microcontact patterning (PμCP) and replica molding were combined to make PDMS/glass microfluidic devices with β-cyclodextrin (β-CD) patterns attached covalently on the glass surface inside microchannels.


2019 ◽  
Author(s):  
Stan B. J. Willems ◽  
Jaccoline Zegers ◽  
Anton Bunschoten ◽  
R. Martijn Wagterveld ◽  
Fijs W. B. van Leeuwen ◽  
...  

<p>By fabricating microfluidic devices via (covalent) plasma microcontact patterning (PµCP) and replica molding, we were able create β-CD patterns inside a microfluidic channel. Chemical reactivity and reusability of the devices were validated through host-guest interactions with diadamantane functionalized Cyanine 5 dye (Cy5-Ad<sub>2</sub>).<b></b></p>


2013 ◽  
Vol 421 ◽  
pp. 334-336 ◽  
Author(s):  
Yong Qiang Cheng ◽  
Cui Lian Guo ◽  
Yang Li ◽  
Bin Zhao ◽  
Xiao Cui

Paper-based microfluidic devices have recently received increasing attention as a potential platform for its low cost, portability and excellent compatibility with biological samples. A variety of fabrication technologies were employed, including simple photolithography, wax plotting, printing, inkjet etching, plasma etching and so on. Meanwhile, the potential applications of paper-based microfluidic devices in diagnostic, point-of-care (POC), and environmental monitoring were reported. We review the recent progress of fabrication technologies and the applications of paper-based microfluidic devices.


Lab on a Chip ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 3337-3343 ◽  
Author(s):  
N. Raj ◽  
V. Breedveld ◽  
D. W. Hess

A fully enclosed paper microfluidic device has been fabricated using pentafluoroethane (PFE) plasma deposition followed by O2 plasma etching.


2019 ◽  
Author(s):  
Stan B. J. Willems ◽  
Jaccoline Zegers ◽  
Anton Bunschoten ◽  
R. Martijn Wagterveld ◽  
Fijs W. B. van Leeuwen ◽  
...  

<p>By fabricating microfluidic devices via (covalent) plasma microcontact patterning (PµCP) and replica molding, we were able create β-CD patterns inside a microfluidic channel. Chemical reactivity and reusability of the devices were validated through host-guest interactions with diadamantane functionalized Cyanine 5 dye (Cy5-Ad<sub>2</sub>).<b></b></p>


2019 ◽  
Author(s):  
Stan B. J. Willems ◽  
Jaccoline Zegers ◽  
Anton Bunschoten ◽  
R. Martijn Wagterveld ◽  
Fijs W. B. van Leeuwen ◽  
...  

<p>By fabricating microfluidic devices via (covalent) plasma microcontact patterning (PµCP) and replica molding, we were able create β-CD patterns inside a microfluidic channel. Chemical reactivity and reusability of the devices were validated through host-guest interactions with diadamantane functionalized Cyanine 5 dye (Cy5-Ad<sub>2</sub>).<b></b></p>


2011 ◽  
Vol 98 (17) ◽  
pp. 174102 ◽  
Author(s):  
Michel Rosso ◽  
Volkert van Steijn ◽  
Louis C. P. M. de Smet ◽  
Ernst J. R. Sudhölter ◽  
Chris R. Kleijn ◽  
...  

Author(s):  
Richard G. Sartore

In the evaluation of GaAs devices from the MMIC (Monolithic Microwave Integrated Circuits) program for Army applications, there was a requirement to obtain accurate linewidth measurements on the nominal 0.5 micrometer gate lengths used to fabricate these devices. Preliminary measurements indicated a significant variation (typically 10 % to 30% but could be more) in the critical dimensional measurements of the gate length, gate to source distance and gate to drain distance. Passivation introduced a margin of error, which was removed by plasma etching. Additionally, the high aspect ratio (4-5) of the thick gold (Au) conductors also introduced measurement difficulties. The final measurements were performed after the thick gold conductor was removed and only the barrier metal remained, which was approximately 250 nanometer thick platinum on GaAs substrate. The thickness was measured using the penetration voltage method. Linescan of the secondary electron signal as it scans across the gate is shown in Figure 1.


Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.


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