Electron emission from silicon tips coated with sol-gel (Ba[sub 0.67]Sr[sub 0.33])TiO[sub 3] ferroelectric thin film

2001 ◽  
Vol 19 (3) ◽  
pp. 1073 ◽  
Author(s):  
W. P. Kang ◽  
A. Wisitsora-at ◽  
J. L. Davidson ◽  
O. K. Tan ◽  
W. G. Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Emission ◽  
Sol Gel ◽  
Ferroelectric Thin Film

Sol-gel processing of strontium-barium niobate ferroelectric thin film

1990 ◽  
Vol 5 (5) ◽  
pp. 916-918 ◽  
Author(s):  
Ren Xu ◽  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
John D. Mackenzie
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Ferroelectric Thin Film ◽  
Processing Temperature ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Crystal Silicon ◽  
Glass Slides ◽  
Gel Processing

Ferroelectric thin film of strontium-barium niobate was successfully fabricated by the sol-gel technique. The films were made on several types of substrate, including quartz, single crystal silicon wafer, and glass slides. The processing temperature was as low as 700 °C. The film obtained with thickness of 3000 Å was dense, transparent, and showed excellent ferroelectricity.

Preparation and properties of sol–gel-derived Bi0.5Na0.5TiO3 lead-free ferroelectric thin film

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3563-3566 ◽  
Author(s):  
T. Yu ◽  
K.W. Kwok ◽  
H.L.W. Chan
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Lead Free

Vacancy Related Defects in Thin Film Pb(ZrTi)O3 Materials

1994 ◽  
Vol 361 ◽  
Author(s):  
A. Krishnan ◽  
D.J. Keeble ◽  
R. Ramesh ◽  
W.L. Warren ◽  
B.A. Tuttle ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Positron Annihilation ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Positron Beam ◽  
S Parameter ◽  
Pt Electrodes ◽  
Post Deposition ◽  
Variable Energy

ABSTRACTPositron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(Zr,Ti)O3 (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO2 electrodes, or by laser ablation with La0.5Sr0.5CoO3 electrodes. The RuO2 and La0.5Sr0.5CoO3 electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La0.5Sr0.5CoO3 layers was observed indicating an increase in neutral or negatively charged open-volume defects.

Microstructures and properties of Bi3.25La0.75Ti2.94V0.06O12 ferroelectric thin film deposited by sol–gel method

2009 ◽  
Vol 44 (12) ◽  
pp. 3223-3228 ◽  
Author(s):  
Jianjun Li ◽  
Jun Yu ◽  
Jia Li ◽  
Bin Zhou ◽  
Guangxing Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Gel Method ◽  
Sol Gel Method

Surface photovoltage characterization of sol–gel derived Bi4Ti3O12 ferroelectric thin film on F-doped SnO2 conducting glass

2010 ◽  
Vol 488 (1-3) ◽  
pp. 50-53 ◽  
Author(s):  
W.C. Wang ◽  
H.W. Zheng ◽  
X.Y. Liu ◽  
X.S. Liu ◽  
Y.Z. Gu ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Surface Photovoltage

scholarly journals Photonic integration based on a ferroelectric thin-film platform

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Shunsuke Abe ◽  
Tomoki Joichi ◽  
Kouichiro Uekusa ◽  
Hideo Hara ◽  
Shin Masuda
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
High Speed ◽  
Sol Gel ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Propagation Loss ◽  
Optical Modulator ◽  
Photonic Integration ◽  
Electro Optic

Abstract Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitaxially-grown by using a modified sol-gel method, and it exhibits large electro-optic coefficients (>120 pm/V) and low propagation loss (1.1 dB/cm). The optical modulator, a Mach-Zehnder type, exhibited a half-wave voltage (Vπ) of 6.0 V (VπL = 4.5 Vcm) and optical modulation up to 56 Gb/s. Also, the VOA (with attenuation range of more than 26 dB) was successfully integrated with the modulator. As a result, it is concluded that the developed ferroelectric platform can pave the way for photonic integration.

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