Preparation of low dielectric constant silicon containing fluorocarbon films by plasma enhanced chemical vapor deposition

Author(s):  
Y. Y. Jin ◽  
Kihong Kim ◽  
G. S. Lee
1998 ◽  
Vol 544 ◽  
Author(s):  
K. K. S. Lau ◽  
K. K. Gleason

IntroductionChemical vapor deposition (CVD) continues to generate immutable interest as a method of producing thin fluorocarbon films. This impetus stems from both the process advantages of CVD and the extensive market potential for the resultant films. Fluorocarbon films find extremely diverse applications because of their unique electrical, chemical and surface properties. They are currently being evaluated, among other applications, as dielectric interconnects in microelectronic circuits1–3 and as passivation coatings in clinical devices.


1996 ◽  
Vol 68 (6) ◽  
pp. 832-834 ◽  
Author(s):  
Sang Woo Lim ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano ◽  
Kunio Tada ◽  
Hiroshi Komiyama

2007 ◽  
Vol 50 (6) ◽  
pp. 1814 ◽  
Author(s):  
Seung Hyung Kim ◽  
R. Navamathavan ◽  
An Soo Jung ◽  
Yong Jun Jang ◽  
Kwang-Man Lee ◽  
...  

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