Modeling and simulation of feature-size-dependent etching of metal stacks

Author(s):  
Shahram Abdollahi-Alibeik ◽  
Jie Zheng ◽  
James P. McVittie ◽  
Krishna C. Saraswat ◽  
Calvin T. Gabriel ◽  
...  
2019 ◽  
Vol 113 ◽  
pp. 52-73 ◽  
Author(s):  
Xiaochong Lu ◽  
Xu Zhang ◽  
Mingxing Shi ◽  
Franz Roters ◽  
Guozheng Kang ◽  
...  

2008 ◽  
Vol 103 (9) ◽  
pp. 096106 ◽  
Author(s):  
A. Berrier ◽  
R. Ferrini ◽  
A. Talneau ◽  
R. Houdré ◽  
S. Anand

1987 ◽  
Vol 111 ◽  
Author(s):  
N. Selamoglu ◽  
J. A. Mucha ◽  
D. L. Flamm ◽  
D. E. Ibbotson

AbstractThe copper catalyzed fluorination of silicon is first-order in [F2] and in [Cu]s until the coverage reaches ∼4 monolayers. Above ∼4 monolayers the reaction rate is zero order in copper, suggesting a limited number of catalytically active Cu/Si sites. Surface diffusion of copper leads to decrease in the etch rate as a function of time as well as feature size-dependent etch depths. The copper compounds CuF2, CuO, and copper silicides, Cu5 Si and Cu3 Si all catalyzed the F2-Si reaction which suggests that they are all converted to the same active species. The results can be explained by mechanisms involving copper fluorides or copper silicides as active intermediates.


1991 ◽  
Vol 206 (1-2) ◽  
pp. 54-58 ◽  
Author(s):  
T.S. Cale ◽  
T.H. Gandy ◽  
G.B. Raupp ◽  
M. Ramaswami

2008 ◽  
Vol 33 (17) ◽  
pp. 1927 ◽  
Author(s):  
Yaocheng Shi ◽  
Sailing He ◽  
Srinivasan Anand

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