Kinetics and Mechanism of the Copper-Catalyzed Etching of Silicon by F2
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AbstractThe copper catalyzed fluorination of silicon is first-order in [F2] and in [Cu]s until the coverage reaches ∼4 monolayers. Above ∼4 monolayers the reaction rate is zero order in copper, suggesting a limited number of catalytically active Cu/Si sites. Surface diffusion of copper leads to decrease in the etch rate as a function of time as well as feature size-dependent etch depths. The copper compounds CuF2, CuO, and copper silicides, Cu5 Si and Cu3 Si all catalyzed the F2-Si reaction which suggests that they are all converted to the same active species. The results can be explained by mechanisms involving copper fluorides or copper silicides as active intermediates.
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1969 ◽
Vol 46
(2)
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pp. 120-126
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1985 ◽
Vol 50
(6)
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pp. 1274-1282
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1978 ◽
Vol 33
(6)
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pp. 657-659
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2015 ◽
Vol 52
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pp. 111-119
1964 ◽
Vol 19
(3)
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pp. 522-525
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