Effect of back contact on field emission from carbon films deposited by very high frequency chemical vapor deposition

2001 ◽  
Vol 19 (1) ◽  
pp. 39 ◽  
Author(s):  
A. I. Kosarev ◽  
A. N. Andronov ◽  
A. J. Vinogradov ◽  
T. E. Felter ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Back Contact ◽  
Very High Frequency ◽  
Very High

Photoluminescence Characteristics of Silicon Oxynitride Films at Different Annealing Temperatures

2010 ◽  
Vol 663-665 ◽  
pp. 336-339
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Xiang Wang ◽  
Yi Xiong Zhang ◽  
Chao Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Maximum Intensity ◽  
Silicon Oxynitride ◽  
Very High Frequency ◽  
Annealing Temperatures ◽  
Very High

Silicon oxynitride films were deposited in very-high-frequency (40.68 MHz) plasma enhanced chemical vapor deposition (VHF-PECVD), and subsequently annealed between 400 and 1200°C in N2 ambient. The effect of annealing temperature on the PL characteristics of the samples was investigated. The experimental results reveal that a broad PL peak around 430 nm (2.88eV) appears in all of the samples. The maximum intensity of this broad PL peak was obtained in the sample annealed at 400°C. The PL characteristics of the annealed samples were discussed.

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