Silicon nitride as an effective protection against oxidation of a TiNi thin film in high temperature oxidizing air environment at atmospheric pressure

Author(s):  
I. Roch ◽  
L. Buchaillot ◽  
X. Wallart ◽  
D. Collard
Lab on a Chip ◽  
2005 ◽  
Vol 5 (3) ◽  
pp. 326 ◽  
Author(s):  
R. M. Tiggelaar ◽  
J. W. Berenschot ◽  
J. H. de Boer ◽  
R. G. P. Sanders ◽  
J. G. E. Gardeniers ◽  
...  

Author(s):  
D. R. Clarke ◽  
G. Thomas

Grain boundaries have long held a special significance to ceramicists. In part, this has been because it has been impossible until now to actually observe the boundaries themselves. Just as important, however, is the fact that the grain boundaries and their environs have a determing influence on both the mechanisms by which powder compaction occurs during fabrication, and on the overall mechanical properties of the material. One area where the grain boundary plays a particularly important role is in the high temperature strength of hot-pressed ceramics. This is a subject of current interest as extensive efforts are being made to develop ceramics, such as silicon nitride alloys, for high temperature structural applications. In this presentation we describe how the techniques of lattice fringe imaging have made it possible to study the grain boundaries in a number of refractory ceramics, and illustrate some of the findings.


Author(s):  
H.-J. Kleebe ◽  
J.S. Vetrano ◽  
J. Bruley ◽  
M. Rühle

It is expected that silicon nitride based ceramics will be used as high-temperature structural components. Though much progress has been made in both processing techniques and microstructural control, the mechanical properties required have not yet been achieved. It is thought that the high-temperature mechanical properties of Si3N4 are limited largely by the secondary glassy phases present at triple points. These are due to various oxide additives used to promote liquid-phase sintering. Therefore, many attempts have been performed to crystallize these second phase glassy pockets in order to improve high temperature properties. In addition to the glassy or crystallized second phases at triple points a thin amorphous film exists at two-grain junctions. This thin film is found even in silicon nitride formed by hot isostatic pressing (HIPing) without additives. It has been proposed by Clarke that an amorphous film can exist at two-grain junctions with an equilibrium thickness.


Author(s):  
Gareth Thomas

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.


1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.


2021 ◽  
Author(s):  
Gokul Venugopalan ◽  
Deepra Bhattacharya ◽  
Subarna Kole ◽  
Cameron Ysidron ◽  
Polyxeni P. Angelopoulou ◽  
...  

Ionomer electrode binders are important materials for polymer electrolyte membrane (PEM) fuel cells and electrolyzers and have a profound impact on cell performance. Herein, we report the effect of two...


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